Patents by Inventor Evan Heller

Evan Heller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Twin-drain spatial wavefunction switched field-effect transistors
    Patent number: 8981344
    Abstract: A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: March 17, 2015
    Inventors: Faquir Chand Jain, Evan Heller
  • Twin-drain spatial wavefunction switched field-effect transistors
    Patent number: 8294137
    Abstract: A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.
    Type: Grant
    Filed: January 4, 2010
    Date of Patent: October 23, 2012
    Inventors: Faquir Chand Jain, Evan Heller
  • Twin-Drain Spatial Wavefunction Switched Field-Effect Transistors
    Publication number: 20120229167
    Abstract: A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.
    Type: Application
    Filed: April 30, 2012
    Publication date: September 13, 2012
    Inventors: Faquir Chand Jain, Evan Heller
  • Twin-drain spatial wavefunction switched field-effect transistors
    Publication number: 20100224861
    Abstract: A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.
    Type: Application
    Filed: January 4, 2010
    Publication date: September 9, 2010
    Inventors: Faquir Chand Jain, Evan Heller