Patents by Inventor Evan O'HARA

Evan O'HARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11969994
    Abstract: Systems and techniques for preserving and improving ink jet nozzle health and printing reliability are disclosed herein. The method may include monitoring whether a triggering event has occurred. In response to detecting the triggering event has occurred, pumping at least a portion of ink contained in a header tank in a direction toward an ink cartridge through a tube connecting the header tank to the ink cartridge. The header tank connected to a print head included as a part of a scan head. The method may further include circulating the ink through the tube back into the header tank, and agitating the scan head by moving the scan head along an x-y gantry. Additional methods may include reverse purging, ejecting a portion of ink through nozzles on the print head while simultaneously wiping a nozzle plate included on the print head, and randomizing print head location when printing.
    Type: Grant
    Filed: November 5, 2020
    Date of Patent: April 30, 2024
    Assignee: ASSA ABLOY AB
    Inventors: Brent D. Lien, Evan Pastor, Chad Everett Beery, Bradley O'Hara, Kyrsten Dominique Elemino, Tanya Jegeris Snyder
  • Publication number: 20160024688
    Abstract: Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals in which one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 28, 2016
    Applicants: Seoul Semiconductor Co., Ltd., Solution Deposition Systems, Inc.
    Inventors: Jacob Richardson, Evan O'Hara
  • Patent number: 8957427
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: February 17, 2015
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • Publication number: 20140306236
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: June 23, 2014
    Publication date: October 16, 2014
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON