Abstract: A transistor comprising a substrate, a gate electrode, a gate layer, a source electrode, a drain electrode, and semiconducting particles. The gate layer includes a dielectric material. A portion of the gate layer is sandwiched within the gap between the source electrode and the drain electrode. The gate layer also includes a plurality of semiconducting particles, and these semiconducting particles bridge the gap between the source electrode and the drain electrode. The major axis of each semiconducting particle is oriented in a direction normal to the device. In some embodiments, the particles are flake shaped. In some embodiments, the particles are dichalcogenide chemicals.