Abstract: In certain examples, the present disclosure may involve use of filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a sample, and providing a set of sample¬characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. More specific examples may include computing a Mueller matrix across an entire image, with the image being captured in a single shot in response to using filtering optics (e.g., metasurface polarization filtering to provide the set of filter-separated light beams). In another related example, sets of polarization-state values, corresponding Stokes vectors, may be used.

Abstract: Certain examples are directed to methods for detection of anomalies in semiconductor thin-film materials, such as strains, defects and the like, that may precipitate defects in semiconductor processing steps and may adversely impact device and system-level functionality, processing, and yields. Certain methods use filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a semiconductor-related material sample, and providing a set of sample-characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. Based on these factors, the types and severities of such anomalies may be analyzed and the related defects remedied.