Patents by Inventor Evelyn Lynn Hu

Evelyn Lynn Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOELECTROCHEMICAL ETCHING OF P-TYPE SEMICONDUCTOR HETEROSTRUCTURES
    Publication number: 20120018853
    Abstract: A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
    Type: Application
    Filed: September 28, 2011
    Publication date: January 26, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: ADELE TAMBOLI, EVELYN LYNN HU, MATHEW C. SCHMIDT, SHUJI NAKAMURA, STEVEN P. DENBAARS
  • Photoelectrochemical etching of P-type semiconductor heterostructures
    Patent number: 8053264
    Abstract: A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: November 8, 2011
    Assignee: The Regents of the University of California
    Inventors: Adele Tamboli, Evelyn Lynn Hu, Mathew C. Schmidt, Shuji Nakamura, Steven P. DenBaars
  • PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GaN-BASED LIGHT EMITTING DIODES
    Publication number: 20090315055
    Abstract: A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.
    Type: Application
    Filed: May 12, 2009
    Publication date: December 24, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Adele Tamboli, Evelyn Lynn Hu, Steven P. DenBaars, Shuji Nakamura
  • Photoelectrochemical wet etching of group III nitrides
    Patent number: 5773369
    Abstract: A method of processing semiconductor films and layers, especially Group III Nitride films, has been achieved, using laser-enhanced, room-temperature wet etching with dilute etchants. Etch rates of a few hundred .ANG./min up to a few thousand .ANG./min have been achieved for unintentionally doped n-type Group III Nitride films grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electrons generated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell.
    Type: Grant
    Filed: April 30, 1996
    Date of Patent: June 30, 1998
    Assignee: The Regents of the University of California
    Inventors: Evelyn Lynn Hu, Milan Singh Minsky