Patents by Inventor Everett K. Shelton

Everett K. Shelton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5434784
    Abstract: This invention relates to an apparatus for sensing a vehicle steering wheel position. A permanent magnet target wheel having a global axial magnetic field normal to a first surface is attached to a steering shaft which is rotated by the steering wheel. Multiple regions equally spaced along a common radius on the first surface are magnetically altered and sensed by magnetically responsive sensors positioned adjacent the first radius. A single region positioned within a finite radius along a second radius on the first surface is magnetically altered and sensed by a magnetically responsive sensor positioned adjacent the second radius. The magnetic sensors are responsive to passage of the multiple regions and single region as the target wheel is rotated. Detection of each of the multiple regions corresponds to rotation of the target wheel by an incremental number of degrees.
    Type: Grant
    Filed: August 26, 1994
    Date of Patent: July 18, 1995
    Assignees: General Motors Corporation, Hughes Aircraft Company
    Inventors: John R. Bradley, Thomas A. Perry, Richard E. Teets, Martin S. Meyer, Jeffrey A. Sell, Thomas H. Van Steenkiste, Frank J. Bohac, Jr., Jerry S. Roach, Manfred W. Reissmueller, Everett K. Shelton, Dozier: James R., Hiro Yamasaki
  • Patent number: 4989053
    Abstract: A floating gate transistor structure including a semiconductor substrate, an access gate dielectrically separated from the substrate, and a floating gate having (a) a first portion dielectrically separated from the substrate by a floating gate oxide region and a tunnel oxide region and (b) a second portion at last partially overlying and dielectrically separated from the access gate. A metal control gate overlies and is dielectrically separated from the floating gate. Also disclosed is a precision capacitor having a doped region as a first capacitor plate and a metal gate as a second capacitor plate.The floating gate transistor structure can be made with a process which includes the steps of forming a gate oxide layer on semiconductor substrate, forming an access gate on the gate oxide layer, and forming an interpoly oxide layer over the access gate and a floating gate oxide layer on the substrate laterally adjacent the gate oxide.
    Type: Grant
    Filed: March 27, 1989
    Date of Patent: January 29, 1991
    Inventor: Everett K. Shelton