Patents by Inventor Evgeni Levin
Evgeni Levin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170217095Abstract: The present disclosure provides three-dimensional (3D) printing methods, apparatuses, systems, and non-transitory computer-readable medium. The disclosure delineates real time manipulation of three-dimensional printing to reduce deformation. The present disclosure further provides 3D object formed using the methods, apparatuses, and systems.Type: ApplicationFiled: April 18, 2017Publication date: August 3, 2017Inventors: Benyamin BULLER, Tasso LAPPAS, Evgeni LEVIN, Sergey KOREPANOV, Rueben MENDELSBERG
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Publication number: 20170173886Abstract: A system for three-dimensional printing is disclosed. The system comprises: a rotary tray configured to rotate about a vertical axis; a printing head, each having a plurality of separated nozzles; and a controller configured for controlling the inkjet printing head to dispense, during the rotation, droplets of building material in layers, such as to print a three-dimensional object on the tray.Type: ApplicationFiled: July 13, 2015Publication date: June 22, 2017Applicant: STRATASYS LTD.Inventors: Guy MENCHIK, Andrew James CARLSON, Jonathan Bennhard HEDLUND, Kevin Ready CAMPION, Robert Earl SIMON, Nathaniel Michael PETERSON, Scott Wayne BEAVER, Evgeni LEVIN, Alexander LIBINSON, Yoav BRESSLER
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Patent number: 9662840Abstract: The present disclosure provides three-dimensional (3D) printing methods, apparatuses, systems, and non-transitory computer-readable medium. The disclosure delineates real time manipulation of three-dimensional printing to reduce deformation. The present disclosure further provides 3D object formed using the methods, apparatuses, and systems.Type: GrantFiled: October 31, 2016Date of Patent: May 30, 2017Assignee: VELO3D, INC.Inventors: Benyamin Buller, Tasso Lappas, Evgeni Levin
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Publication number: 20170129184Abstract: The present disclosure provides three-dimensional (3D) printing methods, apparatuses, systems, and non-transitory computer-readable medium. The disclosure delineates real time manipulation of three-dimensional printing to reduce deformation. The present disclosure further provides 3D object formed using the methods, apparatuses, and systems.Type: ApplicationFiled: October 31, 2016Publication date: May 11, 2017Inventors: Benyamin BULLER, Tasso LAPPAS, Evgeni LEVIN
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Patent number: 7693323Abstract: A method for inspecting a substrate for defects, including: A method for inspecting a substrate for defects, the method including the steps of: (i) obtaining at least two wafer element detection signal; each wafer element detection signal reflects light scattered to a distinct direction; each wafer element detection signal having a wafer element detection value; (ii) calculating at least one wafer element attribute value in response to the at least two wafer element detection signals; retrieving at least one reference wafer element attribute value, each wafer element attribute value corresponding to a reference wafer element attribute value; and (iii) determining a relationship between the at least one reference wafer element attribute value, wafer element attribute value and at least one threshold to indicate a presence of a defect.Type: GrantFiled: March 12, 2002Date of Patent: April 6, 2010Assignee: Applied Materials, Inc.Inventors: Evgeni Levin, Daniel Some, Mirta Perlman
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Patent number: 7410737Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wager, from another wager of from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: GrantFiled: April 17, 2006Date of Patent: August 12, 2008Assignee: Applied Materials Israel, Ltd.Inventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Patent number: 7379580Abstract: A method for inspecting a substrate for defects, including: (a) obtaining an inspected pixel and a reference pixel; (b) calculating an inspected value and a reference value, the inspected value representative of the inspected pixel and the reference value representative of the reference pixel; (c) selecting a threshold in response to a selected value out of the inspected value and the reference value; and (d) determining a relationship between the selected threshold, the reference value and the inspected value to indicate a presence of a defect.Type: GrantFiled: August 12, 2004Date of Patent: May 27, 2008Assignee: Applied Materials, Inc.Inventors: Evgeni Levin, Yehuda Cohen
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Publication number: 20060182335Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wager, from another wager of from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: ApplicationFiled: April 17, 2006Publication date: August 17, 2006Inventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Patent number: 7054480Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wager, from another wager of from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: GrantFiled: January 18, 2005Date of Patent: May 30, 2006Assignee: Applied Materials Israel, Ltd.Inventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Publication number: 20050122510Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wager, from another wager of from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: ApplicationFiled: January 18, 2005Publication date: June 9, 2005Inventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Patent number: 6862491Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wafer, from another wafer or from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: GrantFiled: May 22, 2002Date of Patent: March 1, 2005Assignee: Applied Materials Israel, Ltd.Inventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Publication number: 20050013475Abstract: A method for inspecting a substrate for defects, including: (a) obtaining an inspected pixel and a reference pixel; (b) calculating an inspected value and a reference value, the inspected value representative of the inspected pixel and the reference value representative of the reference pixel; (c) selecting a threshold in response to a selected value out of the inspected value and the reference value; and (d) determining a relationship between the selected threshold, the reference value and the inspected value to indicate a presence of a defect.Type: ApplicationFiled: August 12, 2004Publication date: January 20, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Evgeni Levin, Yehuda Cohen
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Patent number: 6829381Abstract: A method for inspecting a substrate for defects, including: (a) obtaining an inspected pixel and a reference pixel; (b) calculating an inspected value and a reference value, the inspected value representative of the inspected pixel and the reference value representative of the reference pixel; (c) selecting a threshold in response to a selected value out of the inspected value and the reference value; and (d) determining a relationship between the selected threshold, the reference value and the inspected value to indicate a presence of a defect.Type: GrantFiled: July 23, 2002Date of Patent: December 7, 2004Assignee: Applied Materials, Inc.Inventors: Evgeni Levin, Yehuda Cohen
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Publication number: 20030219153Abstract: A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wafer, from another wafer or from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.Type: ApplicationFiled: May 22, 2002Publication date: November 27, 2003Applicant: Applied Materials Israel LtdInventors: Evgeni Levin, Gilad Almogy, Efrat Rozenman
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Publication number: 20030174878Abstract: A method for inspecting a substrate for defects, including: A method for inspecting a substrate for defects, the method including the steps of: (i) obtaining at least two wafer element detection signal; each wafer element detection signal reflects light scattered to a distinct direction; each wafer element detection signal having a wafer element detection value; (ii) calculating at least one wafer element attribute value in response to the at least two wafer element detection signals; retrieving at least one reference wafer element attribute value, each wafer element attribute value corresponding to a reference wafer element attribute value; and (iii) determining a relationship between the at least one reference wafer element attribute value, wafer element attribute value and at least one threshold to indicate a presence of a defect.Type: ApplicationFiled: March 12, 2002Publication date: September 18, 2003Inventors: Evgeni Levin, Daniel Some, Mirta Perlman
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Publication number: 20030099392Abstract: A method for inspecting a substrate for defects, including: (a) obtaining an inspected pixel and a reference pixel; (b) calculating an inspected value and a reference value, the inspected value representative of the inspected pixel and the reference value representative of the reference pixel; (c) selecting a threshold in response to a selected value out of the inspected value and the reference value; and (d) determining a relationship between the selected threshold, the reference value and the inspected value to indicate a presence of a defect.Type: ApplicationFiled: July 23, 2002Publication date: May 29, 2003Inventors: Evgeni Levin, Yehuda Cohen