Abstract: There is provided a method for setting read thresholds to be used for reading multiple bits per cell flash memory cells, the method may include reading, by a read circuit, the flash memory cells using a set of current read thresholds to provide current read results; finding, by an error evaluation circuit, current read errors direction statistics associated with the current read results; determining multiple read threshold changes based upon the current read error direction statistics, without determining a contribution of each current read threshold to the current read error direction statistics; and altering multiple current read thresholds, by the multiple read threshold updates, to provide a set of next read thresholds.

Abstract: A non-transitory computer readable medium that stores instructions for: reading a first group of flash memory cells using a reference read threshold to obtain multiple read results; processing the multiple read results by performing at least one out of calculating a distribution of values of the multiple read results and counting a number of read results of a certain value; estimating at least one actual read threshold to be used during future read attempts in response to at least one out of (i) the number of read results of the certain value and (ii) distribution information about a distribution of values of the read results; and reading a second group of flash memory cells using the at least one actual read threshold to provide actual read results.