Abstract: A semiconductor photoelectric generator, for converting radiation energy from a source, for example, the sun, into electric energy, comprises a matrix of photo electric converters made of a semiconductor material. Each photoelectric converter is doped to form a P-N junction and an isotype junction. Current-collecting conductors are connected to a base region and to an alloy region. An operating surface of the semiconductor photoelectric generator is secured by a translucent adhesive layer to a coating exposed directly to radiation from a radiation source. The coating is composed of optical concentrators which focus the radiation energy in a focal spot and are disposed on the operating surface so that the absorption band of the focussed radiation in the focal spot is located in the base region and is spaced from the P-N junction by a distance not exceeding the diffusion length of the minority carriers in the base region.