Patents by Inventor Ewa B. Oldak

Ewa B. Oldak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post chemical-mechanical planarization (CMP) cleaning composition
    Patent number: 6723691
    Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
    Type: Grant
    Filed: February 12, 2001
    Date of Patent: April 20, 2004
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Shahriar Naghshineh, Jeff Barnes, Ewa B. Oldak
  • Post chemical-mechanical planarization (CMP) cleaning composition
    Publication number: 20010004633
    Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
    Type: Application
    Filed: February 12, 2001
    Publication date: June 21, 2001
    Applicant: ESC, Inc.
    Inventors: Shahriar Naghshineh, Jeff Barnes, Ewa B. Oldak
  • Post chemical-mechanical planarization (CMP) cleaning composition
    Patent number: 6194366
    Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: February 27, 2001
    Assignee: ESC, Inc.
    Inventors: Shahriar Naghshineh, Jeff Barnes, Yassaman Hashemi, Ewa B. Oldak