Abstract: A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a gate structure arranged on the first surface and including a gate electrode formed on the first surface; and a first lightly doped region formed in the first surface and extending from the highly doped source region under the gate electrode. A channel region extends between the first lightly doped region and the highly doped drain region. The channel region has an average doping level of the first dopant type of n×10x that varies by less than 0.5×n×10X between the first lightly doped region and the highly doped drain region along the lateral direction parallel to the first surface.

Abstract: A DNA aptamer was obtained which has an affinity for His-tag, and contains a nucleotide sequence selected from SEQ ID No. 1 and SEQ ID No. 2, which has clear applications.

Abstract: A DNA aptamer was obtained which has an affinity for His-tag, and contains a nucleotide sequence selected from SEQ ID No. 1 and SEQ ID No. 2, which has clear applications.

Abstract: There is disclosed thermoplastic polymeric compositions of polycarbonates, polyamides, polyacetals, and poly(2,6-dimethyl-1,4-phenylene oxides) and which contain in a minor amount sufficient to make the thermoplastic polymeric material easily releasable from a processing mold of fatty acid ester.