Abstract: A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned such that upon application of a specific external voltage at the operating temperature of the diode, it is possible for charge carriers to tunnel from one doped region to the other doped region through the intrinsic region. The semiconductor diode has a planar structure on a semiconductor substrate. A semconductor diode of this kind is suitable for use as a protective diode for other components, particularly when they are mounted on substrates consisting fo connecting semiconductors.

Abstract: A chain amplifier assembly, includes a semiconductor body, a chain amplifier disposed in the semiconductor body and having an input, an output, a plurality of interconnected amplifier stages having transition regions therebetween, each of the stages including a plurality of field-effect transistors having source, gate and drain terminals, each of the source terminals being connected to a given common source potential, a plurality of ohmic resistors and inductances connected in series between the gate terminals forming a gate line, a plurality of capacitances each having a lead connected in parallel to the gate line and another lead connected to the given common source potential, a plurality of inductances connected in series between the drain terminals forming a drain line, a plurality of additional ohmic resistors having a lead connected in parallel to the drain line and another lead connected to the given common source potential, a plurality of additional capacitances having a lead connected in parallel to

Abstract: Fabricating a semiconductor arrangement with a semiconductor body of an A.sub.III -B.sub.V compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required.