Abstract: A printable ink mixture may include: a medium, orthophosphoric acid, at least one metal oxide, and at least one pigment. A method for producing a color print on a glass or ceramic surface may include: producing an ink mixture including a medium, orthophosphoric acid, at least one metal oxide, and at least one pigment, applying the ink mixture to the glass or ceramic surface, removing the medium from the ink mixture, and baking the ink mixture on the glass or ceramic surface to produce the color print.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: A printable ink mixture may include: a medium, orthophosphoric acid, at least one metal oxide, and at least one pigment. A method for producing a color print on a glass or ceramic surface may include: producing an ink mixture including a medium, orthophosphoric acid, at least one metal oxide, and at least one pigment, applying the ink mixture to the glass or ceramic surface, removing the medium from the ink mixture, and baking the ink mixture on the glass or ceramic surface to produce the color print.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: A unit is provided which comprises a first substrate (1) and a second substrate (2). At least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate (1). The first substrate (1) and the second substrate (2) are arranged relative to one another such that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate (2). In addition, a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), which material encloses the optoelectronic component (4) and bonds the first and second substrates (1, 2) together mechanically. The bonding material (3) contains silver oxide in a proportion of more than 0 wt. % and less than 100 wt. %, preferably between 5 wt. % and 80 wt. % inclusive, ideally between 10 wt. % and 70 wt. % inclusive.

Abstract: Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection

Abstract: A lead oxide free glass of high electrical resistance, easy workability, that is, low abrasive characteristics, and a thermal coefficient of expansion compatible with electrical current supply leads, has an electrical resistance of 10.sup.12 ohm cm at 250.degree. C., and, basically, the following composition:SiO.sub.2 40-60%Al.sub.2 O.sub.3 2-5%CaO 5-10%BaO 20-30%V.sub.2 O.sub.5 2-5%K.sub.2 O 5-7%B.sub.2 O.sub.3 0-5%and additives comprising at least one of MgO, B.sub.2 O.sub.3, each present between 0 and about 5%.