Patents by Inventor Ewan Philip Ramsay

Ewan Philip Ramsay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide transistor
    Patent number: 10665703
    Abstract: The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a collector region with a second conductivity type and an emitter region with a second conductivity type. The collector region and the emitter region are within the base region, and the base region, collector region and emitter region are all arranged along an upper surface of the silicon carbide layer.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: May 26, 2020
    Assignee: Raytheon Systems Limited
    Inventors: David Trann Clark, Ewan Philip Ramsay
  • SILICON CARBIDE TRANSISTOR
    Publication number: 20180301548
    Abstract: The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a collector region with a second conductivity type and an emitter region with a second conductivity type. The collector region and the emitter region are within the base region, and the base region, collector region and emitter region are all arranged along an upper surface of the silicon carbide layer.
    Type: Application
    Filed: April 13, 2018
    Publication date: October 18, 2018
    Applicant: Raytheon Systems Limited
    Inventors: David Trann Clark, Ewan Philip Ramsay