Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.