Patents by Inventor Eyal Ginsburg

Eyal Ginsburg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On-die reflectance arrangements
    Patent number: 7399699
    Abstract: Improved semiconductor reflectance arrangements (e.g., semiconductor devices, systems including semiconductor devices, methods, etc.).
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: July 15, 2008
    Assignee: Intel Corporation
    Inventors: Eyal Ginsburg, Michael Kozhukh, Alexander Talalaevsky
  • Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
    Patent number: 7299529
    Abstract: A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: November 27, 2007
    Assignee: Intel Corporation
    Inventors: Eyal Ginsburg, Dora Etgar-Diamant, Li-Peng Wang
  • Electro mechanical device having a sealed cavity
    Patent number: 7227433
    Abstract: Briefly, embodiments of the present invention provide an electro-mechanical device, for example, a Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter, and a process to produce the same.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: June 5, 2007
    Assignee: Intel Corporation
    Inventors: Eyal Ginsburg, Alexander Talalyevsky, Eyal Bar-Sadeh
  • Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
    Publication number: 20060284706
    Abstract: A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer.
    Type: Application
    Filed: June 16, 2005
    Publication date: December 21, 2006
    Inventors: Eyal Ginsburg, Dora Etgar-Diamant, Li-Peng Wang
  • Tapered electrode in an acoustic resonator
    Patent number: 7109826
    Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: September 19, 2006
    Assignee: Intel Corporation
    Inventors: Eyal Ginsburg, Li-Peng Wang, Alexander Talalyevsky, Eyal Bar-Sadeh, Doron Rubin
  • Manufacturing film bulk acoustic resonator filters
    Publication number: 20060176126
    Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.
    Type: Application
    Filed: January 19, 2006
    Publication date: August 10, 2006
    Inventors: Li-Peng Wang, Eyal Bar-Sadeh, Valluri Rao, John Heck, Qing Ma, Quan Tran, Alexander Talalyevsky, Eyal Ginsburg
  • Tapered electrode in an acoustic resonator
    Publication number: 20050231305
    Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
    Type: Application
    Filed: June 14, 2005
    Publication date: October 20, 2005
    Inventors: Eyal Ginsburg, Li-Peng Wang, Alexander Talalyevsky, Eyal Bar-Sadeh, Doron Rubin
  • Electro-mechanical device and method of producing the same
    Publication number: 20050224900
    Abstract: Briefly, embodiments of the present invention provide an electro-mechanical device, for example, a Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter, and a process to produce the same.
    Type: Application
    Filed: March 31, 2004
    Publication date: October 13, 2005
    Inventors: Eyal Ginsburg, Alexander Talalyevsky, Eyal Bar-Sadeh
  • On-die reflectance arrangements
    Publication number: 20050172186
    Abstract: Improved semiconductor reflectance arrangements (e.g., semiconductor devices, systems including semiconductor devices, methods, etc.).
    Type: Application
    Filed: March 4, 2005
    Publication date: August 4, 2005
    Inventors: Eyal Ginsburg, Michael Kozhukh, Alexander Talalaevsky
  • Tapered electrode in an acoustic resonator
    Patent number: 6924717
    Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: August 2, 2005
    Assignee: Intel Corporation
    Inventors: Eyal Ginsburg, Li-Peng Wang, Alexander Talalyevsky, Eyal Bar-Sadeh, Doron Rubin
  • Reduced substrate micro-electro-mechanical systems (MEMS) device and system for producing the same
    Patent number: 6894383
    Abstract: Briefly, a reduced substrate Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter or a low-loss FBAR Radio Frequency filter, and a process and a system to produce the same. A reduced substrate MEMS device in accordance with embodiments of the present invention may include a membrane bonded between packaging parts. A process in accordance with embodiments of the present invention may include bonding a first packaging part to a MEMS device including a support substrate, removing the support substrate, and bonding a second packaging part to the MEMS device.
    Type: Grant
    Filed: March 31, 2003
    Date of Patent: May 17, 2005
    Assignee: Intel Corporation
    Inventors: Eyal Bar-Sadeh, Alexander Talalyevsky, Eyal Ginsburg
  • System and method for producing a reduced substrate micro-electro-mechanical systems (MEMS) device
    Publication number: 20050101139
    Abstract: Briefly, a reduced substrate Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter or a low-loss FBAR Radio Frequency filter, and a process and a system to produce the same. A reduced substrate MEMS device in accordance with embodiments of the present invention may include a membrane bonded between packaging parts. A process in accordance with embodiments of the present invention may include bonding a first packaging part to a MEMS device including a support substrate, removing the support substrate, and bonding a second packaging part to the MEMS device.
    Type: Application
    Filed: December 9, 2004
    Publication date: May 12, 2005
    Inventors: Eyal Bar-Sadeh, Alexander Talalyevsky, Eyal Ginsburg
  • Improvements for on-die reflectance arrangements
    Publication number: 20050056929
    Abstract: Improved semiconductor reflectance arrangements (e.g., semiconductor devices, systems including semiconductor devices, methods, etc.).
    Type: Application
    Filed: May 30, 2003
    Publication date: March 17, 2005
    Inventors: Eyal Ginsburg, Michael Kozhukh, Alexander Talalaevsky
  • Tapered electrode in an acoustic resonator
    Publication number: 20040263287
    Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventors: Eyal Ginsburg, Li-Peng Wang, Alexander Talalyevsky, Eyal Bar-Sadeh, Doron Rubin
  • Reduced substrate micro-electro-mechanical systems (MEMS) device and system for producing the same
    Publication number: 20040188786
    Abstract: Briefly, a reduced substrate Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter or a low-loss FBAR Radio Frequency filter, and a process and a system to produce the same. A reduced substrate MEMS device in accordance with embodiments of the present invention may include a membrane bonded between packaging parts. A process in accordance with embodiments of the present invention may include bonding a first packaging part to a MEMS device including a support substrate, removing the support substrate, and bonding a second packaging part to the MEMS device.
    Type: Application
    Filed: March 31, 2003
    Publication date: September 30, 2004
    Inventors: Eyal Bar-Sadeh, Alexander Talalyevsky, Eyal Ginsburg
  • Manufacturing film bulk acoustic resonator filters
    Publication number: 20040027030
    Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.
    Type: Application
    Filed: August 8, 2002
    Publication date: February 12, 2004
    Inventors: Li-Peng Wang, Eyal Bar-Sadeh, Valluri Rao, John Heck, Qing Ma, Quan Tran, Alexander Talalyevsky, Eyal Ginsburg