Patents by Inventor Eyal Shevartzberg

Eyal Shevartzberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS image sensor array with black pixel using negative-tone resist support layer
    Patent number: 7172922
    Abstract: A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: February 6, 2007
    Assignee: Tower Semiconductor Ltd.
    Inventors: Almog Benjamin, Hanan Wolf, Eyal Shevartzberg
  • CMOS image sensor array with black pixel using negative-tone resist support layer
    Publication number: 20040032518
    Abstract: A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.
    Type: Application
    Filed: August 19, 2002
    Publication date: February 19, 2004
    Applicant: Tower Semiconductor Ltd.
    Inventors: Almog Benjamin, Hanan Wolf, Eyal Shevartzberg