Abstract: A method for initializing individual exposure field parameters of an overlay controller is disclosed including initializing a first control thread having a first context associated with a first product type, wherein a first layout of first exposure fields is defined for the first product type for processing in a stepper. The method further includes remapping a set of previous control state data for a set of control threads associated with other product types different than the first product type into the first layout. The other product types have layouts of second exposure fields different than the first layout. An initial set of control state data for the first control thread associated with the first product type is generated using the remapped previous control state data. The stepper is configured for processing a first substrate of the first product type using the initial set of control state data.

Abstract: A method for initializing individual exposure field parameters of an overlay controller is disclosed including initializing a first control thread having a first context associated with a first product type, wherein a first layout of first exposure fields is defined for the first product type for processing in a stepper. The method further includes remapping a set of previous control state data for a set of control threads associated with other product types different than the first product type into the first layout. The other product types have layouts of second exposure fields different than the first layout. An initial set of control state data for the first control thread associated with the first product type is generated using the remapped previous control state data. The stepper is configured for processing a first substrate of the first product type using the initial set of control state data.

Abstract: At least one method, apparatus and system disclosed herein involves performing a wafer to wafer feedback control of process performed on a semiconductor substrate. A first process on a first semiconductor wafer of a run of semiconductor wafers is performed using a processing tool. A first gas analysis of a gas in the processing tool is performed upon performing the first process. Determining a process feedback adjustment based upon a result of the first gas analysis. Data relating to the process feedback adjustment is provided. Performing a second process on a second semiconductor wafer based on the data relating to the process feedback adjustment.