Patents by Inventor Ezra Bussmann

Ezra Bussmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11796612
    Abstract: A physically unclonable function (PUF) and a method of reading it are provided. The PUF is constituted by a microfabricated array of randomly polarized micromagnets disposed on a substrate. The PUF can be read by creating a magnetization map of the PUF from the signal output of a quantum diamond microscope (QDM) and converting the magnetization map to a numerical sequence.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: October 24, 2023
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Pauli Mark Kehayias, Ezra Bussmann, Tzu-Ming Lu, Andrew Mounce
  • Patent number: 9530873
    Abstract: A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: December 27, 2016
    Assignee: Sandia Corporation
    Inventors: Malcolm S. Carroll, Wayne Witzel, Noah Tobias Jacobson, Anand Ganti, Andrew J. Landahl, Michael Lilly, Khoi Thi Nguyen, Nathaniel Bishop, Stephen M. Carr, Ezra Bussmann, Erik Nielsen, James Ewers Levy, Robin J. Blume-Kohout, Rajib Rahman
  • Patent number: 8697548
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: April 15, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche Scientifique
    Inventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
  • Patent number: 8647957
    Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: February 11, 2014
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, Centre National de la Recherche Scientifique
    Inventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frederic Leroy, Denis Mariolle, Pierre Muller
  • Publication number: 20120282759
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Lukasz BOROWIK, Jean-Charles BARBE, Ezra BUSSMANN, Fabien CHEYNIS, Frédéric LEROY, Denis MARIOLLE, Pierre Müller
  • Publication number: 20120282758
    Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: Centre National De La Recherche Scientifique, Commissariat a L'Energie Atomique Et Aux Ene Alt
    Inventors: Lukasz BOROWIK, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
  • Publication number: 20060225164
    Abstract: Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.
    Type: Application
    Filed: March 15, 2006
    Publication date: October 5, 2006
    Inventors: Clayton Williams, Ezra Bussmann