Abstract: Systems and methods are provided for controlling access to a building or other restricted physical spaces using at least a facial recognition module. The facial recognition module comprises visible light and infrared detection. In some embodiments the facial recognition module comprises an angled front panel to limit blind spots near an entrance. In some embodiments, a facial recognition module may be mounted on one side of an entry point, and a second module on the opposite side, and together they may be configured to prevent unauthorized entry by blocking the opening of the entry point if an unauthorized person is on either side of the entry point.

Abstract: In one example, a sensor node comprises a core node to enable lighting control for a luminaire. The core node has a base forming a plug portion of a socket. The plug portion has at least one optional pin and represents a NEMA socket including a receptacle that is attached to the base of the core node such that the core node is enclosed by the NEMA socket. The socket provides light level control for a light-emitting diode (LED) driver for the luminaire. The sensor node further comprises one or more peripheral devices having sensors for detecting conditions and producing sensor information based on the detected conditions. The sensor node also includes a pod bus which enables power signals to be transmitted to each of the peripheral devices.

Abstract: In one example, a sensor node comprises a core node to enable lighting control for a luminaire. The core node has a base forming a plug portion of a socket. The plug portion has at least one optional pin and represents a NEMA socket including a receptacle that is attached to the base of the core node such that the core node is enclosed by the NEMA socket. The socket provides light level control for a light-emitting diode (LED) driver for the luminaire. The sensor node further comprises one or more peripheral devices having sensors for detecting conditions and producing sensor information based on the detected conditions. The sensor node also includes a pod bus which enables power signals to be transmitted to each of the peripheral devices.

Abstract: A method and a system of lighting nodes having a core node and sensor pods is described. A core node, representing a master device, is positioned within a luminaire housing to enable lighting control for the luminaire. At least one peripheral device representing an integrated sensor pod, an external sensor pod, or a video node. Each of the peripheral devices representing a slave device and includes one or more sensors for detecting conditions. A pod bus, representing a master-slave bus, enables power signals to be transmitted to each of the peripheral devices. The pod bus also enables the core node to query each of the peripheral devices and each of the peripheral devices to respond to a query from the core node.

Abstract: A method and a system of lighting nodes having a core node and sensor pods is described. A core node, representing a master device, is positioned within a luminaire housing to enable lighting control for the luminaire. At least one peripheral device representing an integrated sensor pod, an external sensor pod, or a video node. Each of the peripheral devices representing a slave device and includes one or more sensors for detecting conditions. A pod bus, representing a master-slave bus, enables power signals to be transmitted to each of the peripheral devices. The pod bus also enables the core node to query each of the peripheral devices and each of the peripheral devices to respond to a query from the core node.

Abstract: In various example embodiments, a system and method for parking and traffic analysis are presented. A video processing system includes a pair of cameras coupled to a light pole and configured to face downward toward a street or roadway. The pair of cameras is configurable to provide a combined FOV to capture video data of an area beneath the light pole or across a street from the light pole. The video processing system also includes a computing device for processing the video data captured by the pair of cameras. The computing device analyzes the raw video data to identify relevant scenes for an application. The computing devices determines to report a relevant scene identified to authorized users of the application. The video processing system transmits information related to the identified relevant scene, via the network, to at least one of a service platform or a user device for utilization by the application.

Abstract: Methods and systems for facilitating alignment of optical systems and optoelectronic systems are disclosed here. The methods and systems include passively detecting images, determining relative positions of components and aligning components. An imaging component can detect images and determine relative positions and repositioning instructions.

Abstract: An LED lightbulb retrofit is described that can be adjusted to (a) to accommodate both top-socket and bottom-socket applications, (b) generate a variety of IESNA illumination distributions, (c) generate different levels of total lumens, (d) mount to different sockets such as medium and mogul bases, (e) and work in both refractors and globe fixtures. LED printed circuit boards are mounted on multiple exterior surfaces of a single heat sink with internal fins that can be cut to different lengths to accommodate different numbers of PCBs with a parallel connector mounted (a) symmetrically for symmetrical lighting distributions or (b) asymmetrically for asymmetrical lighting distributions. LED light is controlled by an adjustable array of reflectors or lenses located over the LEDs.

Abstract: Methods and systems for facilitating alignment of optical systems and optoelectronic systems are disclosed here. The methods and systems include passively detecting images, determining relative positions of components and aligning components. An imaging component can detect images and determine relative positions and repositioning instructions.

Abstract: A method for aligning two optical assemblies comprises positioning a first optical assembly in relation to a second optical assembly and securing the first optical assembly to the second optical assembly. The positioning aligns a plurality of first alignment features of the first optical assembly to a plurality of second alignment features of the second optical assembly. Aligning the first alignment features to the second alignment features aligns the second optical assembly to a plurality of optical components on the first optical assembly.

Abstract: A method for placing components on a substrate, the method comprising determining a reference point of a mechanical holding jig based upon a plurality of mechanical features of the mechanical holding jig and placing the substrate into the jig such that mechanical features on the substrate align with the mechanical features on the mechanical holding jig. A location of the substrate is determined with the reference point of the mechanical holding jig. The method continues by installing a plurality of first components onto the substrate aligned to the mechanical holding jig. The substrate is removed from the mechanical holding jig and a second component is placed onto the substrate to cover the plurality of first components. The second component is placed onto the substrate to align a plurality of references points of the second component to the mechanical features on the substrate. The second component is secured to the substrate.

Abstract: A method and apparatus for measuring gas flow are provided. In one embodiment, a calibration circuit for gas control may be utilized to verify and/or calibrate gas flows utilized for backside cooling, process gas delivery, purge gas delivery, cleaning agent delivery, carrier gases delivery and remediation gas delivery, among others.

Abstract: A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck.

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries.

Abstract: A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through at least one of plural concentric gas injection zones of the ceiling electrode and injecting an inert diluent gas through at least a selected one of the plural gas injection zones of the ceiling electrode and apportioning respective flow rates of the diluent gas through respective ones of the gas injection zones in accordance with the distribution among corresponding concentric zones of the workpiece of etch profile tapering.

Abstract: A plasma etch process for etching a workpiece is carried out in a plasma reactor having a ceiling electrode overlying the process region with plural concentric gas injection zones. The process includes injecting process gases with different compositions of chemical species through different ones of the gas injection zones to establish a distribution of chemical species among the plural gas injection zones. The process gases include fluorine-rich polymerizing etch gases that promote a high etch rate, carbon-rich polymerizing etch gases that promote a high polymer deposition rate, polymer management gases (e.g., oxygen or nitrogen) that retard polymer deposition rate and an inert diluent gas that reduces etch profile tapering.

Abstract: A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another.

Abstract: The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch rate, wafer current and possibly other plasma parameters. The chamber parameters may be selected from a group including source power, bias power, chamber pressure, magnet coil current of different coils, gas flow rate in different gas injection zones, gas species composition in different gas injection zones, and possibly other chamber parameters. The method begins with a first step carried out for each one of the selected plasma parameters.

Abstract: The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for respective N chamber parameters. The M plasma parameters are selected from a group including wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass. The N chamber parameters are selected from a group including source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition. The method further includes setting the N chamber parameters to the set of N values.

Abstract: The invention involves a method of characterizing a plasma reactor chamber through the behavior of plasma parameters selected from a group comprising ion density, wafer voltage, etch rate, wafer current, as functions of chamber parameters of source power, bias power and chamber pressure. The method begins by performing two steps for each one of the selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. These values are stored with the corresponding levels of the one chamber parameter as corresponding chamber parameter data. The second step consists of deducing, from the corresponding chamber parameter data, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable.