Patents by Inventor F. Fred Schubert

F. Fred Schubert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8546846
    Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: October 1, 2013
    Assignees: Samsung Electronics Co., Ltd., Rensselaer Polytechnic Institute
    Inventors: Min-Ho Kim, Martin F. Schubert, Jong Kyu Kim, F. Fred Schubert, Yongio Park, Cheolsoo Sone, Sukho Yoon
  • Publication number: 20120132887
    Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked.
    Type: Application
    Filed: March 9, 2011
    Publication date: May 31, 2012
    Inventors: Min-Ho Kim, Martin F. Schubert, Jong Kyu Kim, F. Fred Schubert, Yongio Park, Cheolsoo Sone, Sukho Yoon