Patents by Inventor Fa-Lun Chen

Fa-Lun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260223663
    Abstract: A semiconductor device includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes a plurality of first conductive layers, and the second semiconductor chip is stacked to the first semiconductor chip. One of the first conductive layers includes a first local region and a second local region, the first local region has a first local metal density, the second local region has a second local metal density, and a difference between the first local metal density and the second local metal density is equal to or less than 5%.
    Type: Application
    Filed: January 24, 2025
    Publication date: July 30, 2026
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yao-Hong You, Yun-Hao Chen, Fa-Lun Chen, Tse-Hua Lu, Feng-Chi Hung, Jen-Cheng Liu