Abstract: Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.

Abstract: Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.