Abstract: An application-level memory control group of a first application may be created when the first application is opened. An anonymous page of the first application is added to a least recently used linked list of the application-level memory control group, and a file page of the first application is added to a global least recently used linked list. An application-level memory control group is created in a dimension of an application, and an anonymous page of the application is managed in a refined manner. In addition, a file page of the application-level memory control group may be managed based on a global least recently used linked list.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: Disclosed are compounds of Formula I, or a salt thereof: where A, B, D, X, R1, R2 and R8 are as defined herein, which compounds have properties for antagonizing PCSK9. Also described are pharmaceutical formulations comprising the compounds of Formula I or their salts, and methods of treating cardiovascular disease and conditions related to PCSK9 activity, e.g. atherosclerosis, hypercholesterolemia, coronary heart disease, metabolic syndrome, acute coronary syndrome, or related cardiovascular disease and cardiometabolic conditions.

Abstract: A fluorescence detection device of the present invention includes a substrate and a light source. A fluorescence enhancement layer of the substrate includes a photonic crystal which is formed from a block copolymer thus in the combination with metal particles or a metal film. An excitation light generated from the light source can illuminate a fluorescent material placed on the fluorescence enhancement layer to induce emission of a fluorescence from the fluorescent material. The fluorescence enhancement layer is provided to enhance luminous efficiency of the fluorescence, thus improving fluorescence detection sensitivity.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: An air mover board may include a cold-aisle power and cold-aisle signal connector located on a first edge of the air mover board and configured to couple to a corresponding connector of an information handling system when the air mover board is in a cold-aisle configuration, a hot-aisle power and hot-aisle signal connector located on a second edge of the air mover board opposite that of the first edge and configured to couple to the corresponding connector of an information handling system when the air mover board is in a hot-aisle configuration, and a plurality of mechanical features configured to align and maintain the air mover board in a fixed position relative to an air mover tray, including a feature permanently coupled to the air mover board and configured to mechanically couple to features of the air mover tray in the cold-aisle and hot-aisle configuration.

Abstract: An air mover board may include a cold-aisle power connector located on a first edge of the air mover board and configured to couple to a corresponding power connector of an information handling system when the air mover board is in a cold-aisle configuration, a cold-aisle signal connector located on the first edge of the air mover board and configured to couple to a corresponding signal connector of the information handling system when the air mover board is in the cold-aisle configuration, a hot-aisle power connector located on a second edge of the air mover board opposite that of the first edge and configured to couple to the corresponding power connector of an information handling system when the air mover board is in a hot-aisle configuration, and a hot-aisle signal connector located on the second edge of the air mover board and configured to couple to the corresponding signal connector of the information handling system when the air mover board is in the hot-aisle configuration.

Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

Abstract: A keyboard device and an operating method thereof are provided. The keyboard device includes a microcontroller, a drive circuit, a backlight module, and a plurality of key units. The microcontroller is coupled to a computer device. A detection module of the computer device detects an input mode of the computer device. The plurality of key units is disposed on the backlight module. The plurality of key units each has a plurality of character symbols corresponding to different input modes. The microcontroller outputs a control signal to the drive circuit according to the input mode. The drive circuit drives the backlight module according to the control signal to selectively illuminate one of the plurality of character symbols of each of at least a portion of the plurality of key units.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: An automatic ultrasonic scanning system includes a robotic arm with a camera, an ultrasonic probe mounted at an end of the robotic arm, a six-dimension force sensor, and a host computer. The six-dimension force sensor is fixed at the end of the robotic arm, and the ultrasonic probe is fixed on the six-dimension force sensor via a clamp. The six-dimension force sensor can detect a reactive force generated when the ultrasonic probe is in contact with a body surface of a person. The host computer is connected with each of the six-dimension force sensor, the camera and an image collection card via a data line. A controller of the robotic arm is connected to the host computer via an Ethernet communication bus. The ultrasonic machine is connected to the image collection card via a data line.

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.

Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

Abstract: An image sensor comprises a pixel array, wherein at least one pixel cell in the pixel array comprises an imaging photosensitive element configured to convert a portion of incident light into charges for an image signal, and first and second phase detection photosensitive elements arranged side by side at one side of the imaging photosensitive element opposite to a light incident side and configured to convert light penetrating the imaging photosensitive element into charges for first and second phase detection signals respectively, wherein the first and second phase detection signals are used for focus detection.