Patents by Inventor Fabei ZHANG

Fabei ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250040230
    Abstract: A semiconductor device can include: a substrate; a well region located in the substrate and having a first doping type; a body region located in the substrate and having a second doping type that is opposite to the first doping type; a source region located in the body region and having the first doping type; a drain region located in the well region and having the first doping type; an isolation structure located on the substrate and between the drain region and the source region; and a gate structure located on the isolation structure and including a first gate region and a second gate region, where the first gate region is of the first doping type, and the second gate region is of the second doping type.
    Type: Application
    Filed: July 17, 2024
    Publication date: January 30, 2025
    Inventors: Jiajun Chen, Song Pu, Fabei Zhang, Shilin Cao, Hui Yu, Jun Cai
  • Publication number: 20230170411
    Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection.
    Type: Application
    Filed: April 6, 2022
    Publication date: June 1, 2023
    Applicant: University of Electronic Science and Technology of China
    Inventors: Ming QIAO, Yong CHEN, Wenliang LIU, Dong FANG, Fabei ZHANG, Bo ZHANG