Abstract: A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: —providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), —depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometers and 250 nanometers, inclusive, —applying the wafer (1) to a film (11), —at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and —breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated.

Abstract: A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated.