Abstract: A control assembly for a six-phase electric machine divided into two three-phase windings includes two three-phase inverters, each of which controls one of the three-phase windings. Each inverter has a circuit assembly with power semiconductors of different types, and/or different materials, and or different surface areas, and windings of the same phase in the inverter are wound onto the same cog and galvanically insulated from one another.

Abstract: A method for actuating a circuit arrangement for power semiconductors of an inverter with at least one phase, having at least two semiconductor switches, each of which has at least two power semiconductors consisting of different semiconductor materials and connected in parallel with one another, wherein the method includes switching over between the at least two power semiconductors of different semiconductor materials within a clock period in each of the phases in each case at a first or last switching time of a switchover between the at least two semiconductor switches.

Abstract: A contact assembly for power semiconductor chips has a substrate, at least two power semiconductor chips with a first terminal on the substrate such that they are electrically connected, and at least one contact region facing outward from the substrate, with the same type of terminal for connecting to the power semiconductor, a contact component in the form of a conductive metal film, which is at least partially coated with an insulating layer, which has holes exposing the metal film for terminals for the power semiconductor chips, and wherein at least part of the metal film protrudes from the insulating layer and is connected to a dedicated contact region on the substrate in order to connect to identical types of terminals for the power semiconductor chips.

Abstract: A circuit arrangement for decoupling a rechargeable battery from a DC link of an inverter in the event of a fault is arranged in a pole line between the battery and the DC link. Each pole line is formed from a first path having a first power semiconductor that is low-voltage or low-resistance and a mechanical switching element connected in series therewith, and a second path connected in parallel with the first path having a high-voltage power semiconductor which is high-blocking from the DC link in the direction of the battery. During normal operation, the first power semiconductor, mechanical switching element are closed. During a fault, the first power semiconductor, the mechanical switching element, and the high-voltage power semiconductor are opened in this order and in each case in dependence on a present current and/or voltage state in the circuit arrangement.

Abstract: A method for driving a topological semiconductor switch for a power electronics system, wherein the topological semiconductor switch is split into at least two groups of power semiconductors, wherein, when an active short circuit is identified, switchover from the power semiconductor which conducts the short circuit first to the other power semiconductor takes place.

Abstract: A method for operating at least one switching device of a power converter includes actuating a first switching element of the switching device by a first pulse-width modulation signal when the current flux in the switching device lies below a predefined threshold value, or actuating a second switching element of the switching device by a second pulse-width modulation signal when a current flux in the switching device exceeds the predefined threshold value. At least one parameter of the first pulse-width modulation signal and/or of the second pulse-width modulation signal is adjusted according to the time point of achievement of the predefined threshold value.

Abstract: A method for driving a topological semiconductor switch for a power electronics system, wherein the topological semiconductor switch is split into at least two groups of power semiconductors that are driven temporally separately from one another at a preset switching frequency in such a way that in each case only one of the power semiconductors takes on the total current, wherein the method includes determining of a next switching point, including conducting a pointwise interpolation of the discretized phase current in such a way that the change in the current between two conducting phases is measured and extrapolated, and then, together with the switching frequency, the current rise and the current error are predicted for the next two switching operations, and from this the next switching point with the smallest absolute current deviation is determined.

Abstract: A power electronics module, having a DBC PCB having power semiconductors arranged thereon, and a multilayered leadframe including at least two separate subframes. No power or control routing takes place on the PCB. A region of the load source subregion is arranged between the PCB and the gate source and kelvin source subregion and is in electrical contact with the power semiconductors, and an adjoining region is located outside the PCB. A region of the drain source subregion is in electrical contact with a drain terminal on the PCB, and an adjoining region is located outside the PCB. The gate source subregion and the kelvin source subregion have a region above the load source subregion at which said subregions are in electrical contact with the power semiconductors and have an adjoining region outside the PCB which is opposite the drain source subregion and has pins bent above the PCB.

Abstract: A method for activating a circuit arrangement for power semiconductors of an inverter with at least one phase, having at least two power semiconductors, which are connected in parallel with one another, wherein the power semiconductors are divided into two groups, of which at least one first group has a separate driver, and wherein the activation of the power semiconductors takes place in such a manner that during the switch-on operation, initially the first group and subsequently the second group is switched on.

Abstract: A method for manufacturing a terminal apparatus for connecting a component for an electrical module includes bending a pre-machined sheet metal element, having a first electric terminal device for connecting to a first potential, a control terminal having a control contact, and a second electric terminal device arranged between the first electric terminal device and the control terminal and separated from the first electric terminal device by a gap, and for connecting to a second electrical potential, further having a path section including a first path for contact-connection with a terminal for the second electrical potential of the component, and a second path arranged in parallel with the first, and wherein an edge region of the sheet metal is bent such that the first electric terminal device and the path section are brought together such that the first electric terminal device and the path section overlap.

Abstract: A method for manufacturing a terminal apparatus for connecting at least one electrical or electronica component for an electrical or electronic module includes bending a pre-machined sheet metal element, having a first electric terminal device for connecting to a first electrical potential, a control terminal having at least one control contact, and a second electric terminal device arranged between the first electric terminal device and the control terminal for connecting to a second electrical potential, wherein the second electric terminal device has a path section including a first path for contact-connection with a terminal for the second electrical potential of the electrical or electronic component, and at least one second path arranged in parallel with the first path, and wherein a first bending section of the first path is bent into a lower plane than a second bending section of the second path in order to form the terminal apparatus.

Abstract: A power module for a current converter for an electric drive of a motor vehicle comprises a termination substrate having electrical contact portions that are electrically isolated from one another, a plurality of power semiconductor elements arranged on the termination substrate, each having a first terminal, a second terminal, and a control terminal, the first terminals of all the power semiconductor elements being electrically connected to a first contact portion of the termination substrate.

Abstract: A power module for operating a vehicle, in particular an electric vehicle and/or a hybrid vehicle, comprising numerous semiconductor components, which form at least one topological switch; an input contact for supplying an input current to the semiconductor components; a control electronics for controlling the semiconductor components, to generate an output current based on the input current; an output contact for outputting the output current; wherein the control electronics is configured to set a gate current for one of the semiconductor components based on one or more status parameters for the semiconductor component.

Abstract: A method for actuating a circuit arrangement for power semiconductors of an inverter with at least one phase, having at least two semiconductor switches, each of which has at least two power semiconductors consisting of different semiconductor materials and connected in parallel with one another, wherein the method includes switching over between the at least two power semiconductors of different semiconductor materials within a clock period in each of the phases in each case at a first or last switching time of a switchover between the at least two semiconductor switches.

Abstract: A power module for operating a vehicle, in particular an electric vehicle and/or a hybrid vehicle, comprising numerous semiconductor components, which form at least one topological switch; an input contact for supplying an input current to the semiconductor components; a control electronics for controlling the semiconductor components, to generate an output current based on the input current; an output contact for outputting the output current; wherein the control electronics is configured to set a gate current for one of the semiconductor components based on one or more status parameters for the semiconductor component.