Abstract: The invention relates to an optoelectronic device having at least two emission regions and having a radiation exit face, the emission regions each having an active region provided to generate radiation, the active regions of the emission regions being arranged in a common emitter plane. The emission regions are each assigned a portion of the radiation exit face through which portion the radiation emitted by the respective emission region exits, wherein the radiation exit face is formed at least in part by a radiation-permeable body which is arranged on at least one of the emission regions, and wherein the portions of the radiation exit face are arranged at differing distances from the common emitter plane.

Abstract: In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.

Abstract: The present disclosure is directed to systems and methods useful for providing a low profile metalens array that provides a relatively uniform far-field illumination in the visible and/or near-infrared electromagnetic spectrum using a plurality of vertical cavity surface emitting lasers (VCSELs) disposed a distance from a plurality of metalenses forming a metalens array, in which the VCSELs are decorrelated from the metalenses forming the metalens array.

Abstract: In an embodiment a nanostamping method includes forming a nanostructure in a layer of optical embossing material on a first carrier substrate by a forming stamp having a nano-relief, wherein the nanostructure comprises a plurality of nano-elevations which are connected via an embossing material base, generating a coated nanostructure by covering the nano-elevations with a filler material layer, wherein the filler material layer and the optical embossing material comprise different refractive indices, applying a second carrier substrate on the coated nanostructure, detaching the first carrier substrate and removing a material of the embossing material base.

Abstract: The invention relates to a light emitter unit having at least one VCSEL chip, which light emitter unit comprises: a light exit surface, via which light produced by the VCSEL chip and radiated perpendicularly to the chip plane is emitted into the surroundings; and contacts for supplying the electrical energy required for the production of the light by the VCSEL chip. The described technical solution is characterized in that at least one lateral surface of the VCSEL chip arranged perpendicularly to the chip plane is touched and covered, at least in parts, by a cover element.

Abstract: An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.