Abstract: A radiation-emitting semiconductor chip includes a substrate; an epitaxial semiconductor layer sequence having an active zone that generates electromagnetic radiation of a first wavelength range, wherein the substrate is transparent to electromagnetic radiation of the active zone; and an optically active layer arranged on a side surface of the substrate and on a rear main surface of the semiconductor chip, which lies opposite to a radiation exit surface of the semiconductor chip.

Abstract: An optoelectronic semiconductor chip includes a contact layer that impresses current directly into a first semiconductor region present in direct contact with a current web, the first semiconductor region is an n-side and a second semiconductor region is a p-side of a semiconductor layer sequence, and a second mirror layer is applied directly to a second semiconductor region, a plurality of contact fields and isolator fields are arranged alternately along a longitudinal direction of the current web, in the contact fields, the contact layer is in direct contact with the current web, and the isolator fields are free of the contact layer, and a first mirror layer is located between the current web and the first semiconductor region.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.

Abstract: In order to provide a sealing element which ensures a reliable seal and which can be produced easily and economically, it is proposed that a main body of the sealing element is preferably formed from a partially fluorinated or fully fluorinated thermoplastic material and has obtained at least part of its final outer shape or only part of its final outer shape in particular in a high-pressure process and/or in a high-temperature process.

Abstract: A radiation-emitting semiconductor chip may include a semiconductor body having a first layer, a second layer, and an active layer therebetween. The active layer may be subdivided into a multiplicity of segments in a plan view of the chip. A separating structure may be formed in the semiconductor body between neighboring segments. The multiplicity of segments may be electrically connected to one another in series and/or in parallel. At least one segment may be assigned a first contact layer having a first contact finger structure and a second contact layer having a second contact finger structure. There may be a direct electrical contact between the first contact layer and the second contact layer in places.

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.

Abstract: An optoelectronic semiconductor chip includes a contact layer that impresses current directly into a first semiconductor region present in direct contact with a current web, the first semiconductor region is an n-side and a second semiconductor region is a p-side of a semiconductor layer sequence, and a second mirror layer is applied directly to a second semiconductor region, a plurality of contact fields and isolator fields are arranged alternately along a longitudinal direction of the current web, in the contact fields, the contact layer is in direct contact with the current web, and the isolator fields are free of the contact layer, and a first mirror layer is located between the current web and the first semiconductor region.

Abstract: An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-type connection contact, wherein a first trench extending at least partially into the p-doped semiconductor layer is arranged below the p-type connection contact, wherein an electrically insulating first blocking element arranged at least partially below the p-type connection contact and at least partially within the trench is arranged at least between the n-doped semiconductor layer and the p-type connection contact, and wherein the electrically insulating first blocking element is configured to prevent a direct current flow between the p-type connection contact and the p-doped and n-doped semiconductor layers and the active layer.

Abstract: An optoelectronic chip includes a semiconductor layer sequence including at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-connection contact, the n-doped semiconductor layer is electrically contacted by an n-connection contact, the semiconductor chip has at least two trenches, the p-connection contact is located within the first trench and the n-connection contact is located within the second trench, below the p-connection contact and within the first trench a first dielectric mirror element is arranged, which is electrically insulated, and below the n-connection contact and within the second trench and between the n-connection contact and the n-doped semiconductor layer, a second dielectric mirror element is arranged at least in regions, the second dielectric mirror element be

Abstract: The invention relates to an optoelectronic semiconductor chip (100), comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (5) and an active layer (4) arranged between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (5), wherein the p-doped semiconductor layer (5) has an electrically conductive layer (7) arranged above it that is set up for making electrical contact with the p-doped semiconductor layer (5), wherein a lateral edge (2) is arranged laterally with respect to the n-doped semiconductor layer (3), the p-doped semiconductor layer (5) and the active layer (4), wherein the lateral edge (2) has at least two oblique edge portions, wherein a first edge portion (21) has at least areas arranged laterally with respect to the p-doped semiconductor layer (5), wherein a second lateral edge (22) has at least areas arranged laterally with respect to the n-doped semiconductor layer (3), wherein the angle of the first edge portion (21) in relation to the active layer (

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body having an active region that generates radiation; a first contact layer having a first contact surface and a first contact web structure connected to the first contact surface; a second contact layer having a second contact surface and a second contact web structure connected to the second contact surface, wherein the first contact web structure and the second contact web structure overlap in places in plan view of the semiconductor chip; a current distribution layer through which the first semiconductor layer electrically conductively connects to the first contact layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged between the first semiconductor layer and the current distribution layer and has a plurality of openings into which the current distribution layer extends, and a diameter of the openings is 1 ?m to 20 ?m.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.

Abstract: In order to provide a piston device that is of simple construction and provides optimised sealing, it is proposed that the piston device should include the following: a housing that includes a piston receptacle; a piston that is arranged to be linearly displaceable in the piston receptacle; a main gasket element that separates a first medium space from a second medium space, and a supplementary gasket element, different from the main gasket element, for sealing in a region between the piston and the piston receptacle.

Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Abstract: The invention relates to an optoelectronic semiconductor chip (100), comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (5) and an active layer (4) arranged between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (5), wherein the p-doped semiconductor layer (5) has an electrically conductive layer (7) arranged above it that is set up for making electrical contact with the p-doped semiconductor layer (5), wherein a lateral edge (2) is arranged laterally with respect to the n-doped semiconductor layer (3), the p-doped semiconductor layer (5) and the active layer (4), wherein the lateral edge (2) has at least two oblique edge portions, wherein a first edge portion (21) has at least areas arranged laterally with respect to the p-doped semiconductor layer (5), wherein a second lateral edge (22) has at least areas arranged laterally with respect to the n-doped semiconductor layer (3), wherein the angle of the first edge portion (21) in relation to the active layer (

Abstract: A radiation-emitting semiconductor chip includes a substrate; an epitaxial semiconductor layer sequence having an active zone that generates electromagnetic radiation of a first wave-length range, wherein the substrate is transparent to electromagnetic radiation of the active zone; and an optically active layer arranged on a side surface of the substrate and on a rear main surface of the semiconductor chip, which lies opposite to a radiation exit surface of the semiconductor chip.