Abstract: A device for controlling trapped ions includes a semiconductor substrate. The semiconductor substrate includes a first main surface and a second main surface opposite the first main surface. The substrate further includes a doped region adjacent the first main surface. An electrode of an ion trap is disposed over the doped region. An insulating layer is disposed between the electrode and the doped region. A contact region configured to be biased by an external potential is electrically connected to the doped region and has a doping concentration higher than a doping concentration of the doped region.