Abstract: An MEMS sound transducer is provided, having: at least one actuator; a radiation structure coupled to the actuator and configured as a separate element; a structure surrounding the radiation structure, wherein the radiation structure is separated from the surrounding structure by one or more gaps; and at least one screen arranged along at least one of the one or more gaps.

Abstract: Embodiments of the present disclosure describe MEMS sound transducers for generating sound, having an actuator, wherein the actuator is separated from a surrounding structure by one or more gaps and is configured to execute a relative movement between the actuator and the surrounding structure. Additionally, the MEMS sound transducer has the surrounding structure, wherein the actuator and the surrounding structure has a plurality of recesses and projections which are separated by one or more gaps, wherein the plurality of projections belonging to the actuator are arranged to interdigitate into the plurality of recesses belonging to the surrounding structure, and/or the plurality of projections belonging to the surrounding structure to interdigitate into the plurality of recesses belonging to the actuator.

Abstract: An electronic component comprises a first layer and a second layer, wherein a main surface of the first layer is arranged opposite a main surface of the second layer. The first layer comprises a polarized first material. A polarization of the first material faces in a first direction. The second layer comprises a polarized second material having at least one polarization state, wherein a direction of a polarization of the second material at least in the one polarization state of the second material is at least in part opposite to the first direction such that a charge zone forms along the main surface of the first and/or the second layer, said charge zone being electrically conductive at least when the second material is in the one polarization state.

Abstract: A transistor having high electron mobility (HEMT) having a first layer and a second layer is described. The first layer has a first material made of a first nitride compound. The first nitride compound has a group III element. The second layer has a second material made of a second nitride compound. The second nitride compound has a group III element. A main surface of the second layer is arranged opposite a main surface of the first layer, such that a charge zone forms along the main surface of the second layer. The HEMT further has a gate electrode, which is arranged opposite the second layer, at least in regions, such that the second layer is arranged between the first layer and the gate electrode. Furthermore, the HEMT has a third layer, which is arranged between the gate electrode and the second layer. The third layer has a ferroelectric third material made of a third nitride compound, or a ferroelectric third material made of an oxide compound which contains zinc.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Abstract: Embodiments of the present disclosure describe an MEMS sound transducer having an actuator and a structure surrounding the actuator, wherein the actuator is separated from the surrounding structure by one or several slits. Furthermore, the sound transducer includes at least one first diaphragm arranged on the actuator along at least one of the one or several slits; and at least one second diaphragm arranged on the surrounding structure along the slit of the one or several slits.

Abstract: A method of producing an oppositely magnetized magnetic structure within or on a substrate material includes: generating first and second numbers of cavities within or on a substrate material and filling the first and second numbers of cavities with first and second hard magnetic materials, respectively exhibiting first and second coercive field strengths, wherein the second coercive field strength is smaller than the first coercive field strength. The method further includes magnetizing, in a first direction, the first and second arrangements of magnetic structures, by a magnetic field having a field strength that exceeds the first and second coercive field strengths. The method further magnetizes the second arrangement of hard magnetic structures in a second direction, which differs from the first direction, by a second magnetic field having a field strength below the first coercive field strength but greater than the second coercive field strength.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Abstract: Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Abstract: A microsystem has a first support element and a second support element, wherein a relative position of the first support element and the second support element among each other is variable. The microsystem has a permanent-magnetic unit connected to the first support element in a mechanically fixed manner and configured to generate a magnetic field. Additionally, the microsystem has a sensor unit connected to the second support element in a mechanically fixed manner and configured to detect the magnetic field and provide a sensor signal which is based on the magnetic field. The sensor signal indicates a relative position of the support elements among one another.

Abstract: A method of producing a device includes providing a substrate which has a recess. A multitude of loose particles is introduced into the recess. A first portion of the particles is coated by using a coating process having a depth of penetration which extends from an opening of the recess, along a direction of depth, and into the recess, so that the first portion is connected to form a solidified porous structure. The depth of penetration of the coating process which extends into the recess is set such that a second portion of the particles is not connected by means of the coating, and such that the solidified first portion of the particles is arranged between the second portion of the particles and surroundings of the recess. According to the invention, the second portion of the particles is at least partly removed from the recess.

Abstract: A MEMS system includes a first permanent-magnetic microstructure and a second permanent-magnetic microstructure. The first permanent-magnetic microstructure is movable along a first direction. The second permanent-magnetic microstructure is arranged to be spaced apart from the first permanent-magnetic microstructure, wherein, by moving the first permanent-magnetic microstructure along the first direction, the second permanent-magnetic microstructure or one or more elements of the second permanent-magnetic microstructure are either moved or actuated in a second direction or undergo rotation.

Abstract: A MEMS includes a substrate having an element movably suspended relative to the substrate, the element having a first main surface and an opposite second main surface. The MEMS includes a first spring element connected between the substrate and a first column structure connected to the second main surface, and includes a second spring element connected between the substrate and a second column structure connected to the second main surface.

Abstract: Micro-Electro-Mechanical System (MEMS) devices may include at least one actuator. The actuator has a first end attachable to more than one side of a frame of the MEMS device, and has a second end attachable to a stage of the MEMS device, particularly via a joint. Further, the second end of the actuator is configured to bend upwards or downwards when the actuator is driven and the first end is attached.

Abstract: Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Abstract: A method of producing an oppositely magnetized magnetic structure within or on a substrate material includes: First and second numbers of cavities are generated within or on a substrate material and are filled with first and second hard magnetic materials, respectively, exhibiting first and second coercive field strengths, respectively, so as to produce first and second arrangements of hard magnetic structures, respectively, the second coercive field strength being smaller than the first coercive field strength. The first and second arrangements of hard magnetic structures are magnetized in a first direction by a first magnetic field exhibiting a field strength which exceeds the first and second coercive field strengths. The second arrangement of hard magnetic structures is magnetized in a second direction, which differs from the first direction, by a second magnetic field exhibiting a field strength which falls below the first coercive field strength but exceeds the second coercive field strength.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Abstract: A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 ?m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

Abstract: A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 ?m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

Abstract: A method of producing a device includes providing a substrate which has a recess. A multitude of loose particles is introduced into the recess. A first portion of the particles is coated by using a coating process having a depth of penetration which extends from an opening of the recess, along a direction of depth, and into the recess, so that the first portion is connected to form a solidified porous structure. The depth of penetration of the coating process which extends into the recess is set such that a second portion of the particles is not connected by means of the coating, and such that the solidified first portion of the particles is arranged between the second portion of the particles and surroundings of the recess. According to the invention, the second portion of the particles is at least partly removed from the recess.