Abstract: An anchoring device, in particular to a bolt anchor or an expansion anchor, includes a communication interface via which at least one item of information can be made available to an external device. It is proposed that the communication interface have at least one surface wave unit for generating an acoustic surface wave.

Abstract: A production method for a layer structure, including providing a substrate, wherein at least a top surface of the substrate is made from a non-conductive material; depositing a catalyst structure onto the top surface of the substrate; depositing a graphene structure onto the catalyst structure; and at least partially removing the catalyst structure situated between the substrate and the graphene structure.

Abstract: A micromechanical sound transducer system includes a substrate that includes (a) a cavity with a cavity edge area, (b) a front side, and (c) a rear side; a piezoelectric vibrating beam that is elastically suspended on the front side and that extends across the cavity; and, for the piezoelectric vibrating beam, a respective deflection limiting device that is on a front edge area of the respective vibrating beam and that is configured to limit a deflection of the respective vibrating beam to a limiting deflection by causing the respective front edge area of the respective vibrating beam to interact with the cavity edge area or an opposing front edge area of another vibrating beam.

Abstract: A device for generating thermal images includes a low resolution infrared (IR) sensor supported within a housing and having a field of view. The IR sensor is configured to generate thermal images of objects within the field of view having a first resolution. A spatial information sensor supported within the housing is configured to determine a position for each of the thermal images generated by the IR sensor. A processing unit supported within the housing is configured to receive the thermal images and to combine the thermal images based on the determined positions of the thermal images to produce a combined thermal image having a second resolution that is greater than the first resolution.

Abstract: Measures are provided, by which mechanical stresses within the diaphragm structure of a MEMS component may be intentionally dissipated, and which additionally enable the implementation of diaphragm elements having a large diaphragm area in comparison to the chip area. The diaphragm element is formed in the layer structure of the MEMS component. It spans an opening in the layer structure and is attached via a spring structure to the layer structure. The spring structure includes at least one first spring component, which is oriented essentially in parallel to the diaphragm element and is formed in a layer plane below the diaphragm element. Furthermore, the spring structure includes at least one second spring component, which is oriented essentially perpendicularly to the diaphragm element. The spring structure is designed in such a way that the area of the diaphragm element is greater than the area of the opening which it spans.

Abstract: A micromechanical sound transducer system includes a substrate that includes (a) a cavity with a cavity edge area, (b) a front side, and (c) a rear side; a piezoelectric vibrating beam that is elastically suspended on the front side and that extends across the cavity; and, for the piezoelectric vibrating beam, a respective deflection limiting device that is on a front edge area of the respective vibrating beam and that is configured to limit a deflection of the respective vibrating beam to a limiting deflection by causing the respective front edge area of the respective vibrating beam to interact with the cavity edge area or an opposing front edge area of another vibrating beam.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.

Abstract: For a MEMS component, in the layer structure of which at least one sound-pressure-sensitive diaphragm element is formed, which spans an opening or cavity in the layer structure and the deflections of which are detected with the aid of at least one piezosensitive circuit element in the attachment area of the diaphragm element, design measures are provided, by which the stress distribution over the diaphragm surface may be influenced intentionally in the event of deflection of the diaphragm element. In particular, measures are provided, by which the mechanical stresses are intentionally introduced into predefined areas of the diaphragm element, to thus amplify the measuring signal. For this purpose, the diaphragm element includes at least one designated bending area, which is defined by the structuring of the diaphragm element and is more strongly deformed in the event of sound action than the adjoining diaphragm sections.

Abstract: A MEMS microphone component including at least one sound-pressure-sensitive diaphragm element is formed in the layer structure of the MEMS component, which spans an opening in the layer structure. The diaphragm element is attached via at least one column element in the central area of the opening to the layer structure of the component. The deflections of the diaphragm element are detected with the aid of at least one piezosensitive circuit element, which is implemented in the layer structure of the diaphragm element and is situated in the area of the attachment of the diaphragm element to the column element.

Abstract: A micromechanical component having at least one electromechanical flexible structure, each of which includes a first piezoelectric layer, a first outer electrode situated on a first side of the first piezoelectric layer, a first intermediate electrode situated on a second side, oriented away from the first side, of the first piezoelectric layer, a second piezoelectric layer situated on a side of the first intermediate electrode oriented away from the first piezoelectric layer, and a second outer electrode situated on a side of the second piezoelectric layer oriented away from the first intermediate electrode, the at least one electromechanical flexible structure having in each case a second intermediate electrode that is situated on the side of the first intermediate electrode oriented away from the first piezoelectric layer, between the second piezoelectric layer and the first intermediate electrode.

Abstract: A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

Abstract: A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.

Abstract: A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.

Abstract: A sensor and/or transducer device having at least one bending structure including at least one piezoelectric layer in each case, using which an intermediate volume between at least two electrodes of the bending structure is at least partially filled in each case, the sensor and/or transducer device including an electronic unit, which is designed to apply at least one predefined or established actuator voltage between two of the electrodes at a time of the bending structure in such a way that a deformation of the bending structure triggered by an intrinsic stress gradient in the bending structure may be at least partially compensated for. A method for operating a sensor and/or transducer device having at least one bending structure, which includes at least one piezoelectric layer, and a method for calibrating a microphone having at least one bending structure, which includes at least one piezoelectric layer, are also described.

Abstract: A micromechanical component having a substrate which includes a micro-electromechanical microphone structure, the micro-electromechanical microphone structure encompassing at least one piezoelectric layer and at least one polymer mass as at least part of a packaging of the substrate fitted with the micro-electromechanical microphone structure, which is in contact with at least a partial outer surface of the substrate fitted with the micro-electromechanical microphone structure. A method is also described for packaging a substrate having a micro-electromechanical microphone structure encompassing at least one piezoelectric layer by developing at least a portion of a packaging of the substrate fitted with the micro-electromechanical microphone structure from at least one polymer mass, and the at least one polymer mass being applied directly on at least a partial outer surface of the substrate fitted with the micro-electromechanical microphone structure.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A production method for a layer structure, including providing a substrate, wherein at least a top surface of the substrate is made from a non-conductive material; depositing a catalyst structure onto the top surface of the substrate; depositing a graphene structure onto the catalyst structure; and at least partially removing the catalyst structure situated between the substrate and the graphene structure.

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Abstract: In one embodiment, a portable temperature sensing system includes a portable housing configured to be carried by a user, a microelectrical mechanical system (MEMS) thermal sensor assembly supported by the housing and including an array of thermal sensor elements, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, determine an average sensed temperature based upon the signals, and render data associated with the determined average sensed temperature.