Abstract: A method for manufacturing a growth substrate adapted to produce by epitaxy a matrix of diodes based on InGaN, including the following steps of: producing a crystalline stack including, from a conductive buffer layer: a lower layer based on doped GaN; then a separation intermediate layer, based on InGaN; then an upper layer (14) based on AlGaN; producing mesas of three categories M1, M2, M3, by localised etching of the crystalline stack; eliminating, by etching, the upper portion of at least the mesas M3, the upper portion of the mesas M1 being preserved; then non-photo-assisted electrochemically porosifying the lower portions of only the mesas M1 and M3, the lower portion of the mesas M2 being non-porosified.

Abstract: An optoelectronic system includes a photoelectric transducer to emit or receive optical waves and a waveguide to guide waves emitted by the transducer or to guide waves to the transducer, includes a stack successively including a porous first layer of first type doped semiconductor material, a second layer of first type doped semiconductor material doped and lightly doped, a zone including quantum wells, a third layer of semiconductor material doped according to a second doping type opposite to the first type, the photoelectric transducer including a first portion of the porous first layer, a first portion of the second layer, at least a first portion of the zone including the quantum well(s) and at least a first portion of the third layer; the waveguide including a second portion of the second layer adjacent to the first portion and disposed on a second portion of the porous first layer.

Abstract: A method of manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following steps: a) forming a semiconductor support stack including at least one doped semiconductor layer; b) simultaneously forming, during a common epitaxy step, an active emission semiconductor stack of the LED and an active reception semiconductor stack of the photodiode; c) forming trenches delimiting first and second support pads; and d) porosifying the doped semiconductor layer in the first support pad without porosifying this layer in the second support pad, or porosifying the doped semiconductor layer in the second support pad without porosifying this layer in the first support pad.

Abstract: A method for manufacturing a growth substrate, including producing mesas based on GaN having various porosification levels, implementing differentiated steps of electrochemical porosification, non-photoassisted and photoassisted, of various portions of the mesas.

Abstract: A method for classifying at least one input image representing a target particle in a sample, involves implementing, by data processing of a client, steps of: (b) extracting the characteristic map of the target particle by a convolutional neural network pre-trained on a base of public images; (c) classifying the input image according to the extracted characteristic map.

Abstract: A digital holographic imaging technique, includes iterative steps of: a) through back-propagation to the object coordinate of a hologram field comprising a spatial distribution of amplitude corresponding to the spatial distribution of intensity of the hologram and a spatial distribution of phase, determining an object field involving a spatial distribution of absorption and of phase shift of the imaged object, b) thresholding the values of the spatial distribution of absorption and of phase shift by decreasing the values to below a respective threshold, the thresholds decreasing in each iteration, c) through repropagation of the object field to the hologram coordinate, determining a modified hologram field comprising a modified spatial distribution of amplitude and a modified spatial distribution of phase, d) replacing the spatial distribution of phase of the hologram field with the modified spatial distribution of phase, the spatial distribution of phase shift and of absorption of the imaged object being tho

Abstract: A method for classifying at least one input image representing a target particle in a sample involves implementing, by data processing a client, steps of: (B) extracting a characteristic map of the target particle from the input image; (c) reducing the number of variables in the extracted characteristic map, using the t-SNE algorithm; (d) classifying, unsupervised, the input image based on the characteristic map having a reduced number of variables.

Abstract: A method for classifying at least one input image containing a target particle in a sample, involves implementing, via data-processing of a client, steps of: (b) extracting a vector of characteristics of the target particle, the characteristics being numerical coefficients each associated with one elementary image of a set of elementary images each representing a reference particle, such that a linear combination of the elementary images weighted by the coefficients approximates the representation of the target particle in the input image; (c) classifying the input image depending on the extracted vector of characteristics.

Abstract: A method for classifying a sequence of input images representing a target particle in a sample over time, includes the following steps performed by the data processing of a client, namely: (b) concatenation of the input images in the sequence as a three-dimensional stack; (c) direct classification of the three-dimensional stack using a convolutional neural network, CNN

Abstract: The present disclosure is directed to LED components, and systems using such components, having a light emission profile that may be controlled independently of the lens shape by varying the position and/or orientation of LED chips with respect to one or both of an overlying lens and the surface of the component. For example, the optical centers of the LED emitting surface and the lens, which are normally aligned, may be offset from each other to generate a controlled and predictable emission profile. The LED chips may be positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The use of offset emitters allows for LED components with shifted or tilted emission patterns, without causing output at high angles of the components. This is beneficial as it allows a lighting system to have tilted emission from the LED component and primary optics.