Abstract: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

Abstract: The power semiconductor submodule (1) has at least two semiconductor chips (21, 22), which have two main electrodes (3, 4), between two main connections (6, 7), with a contact force being exerted by a contact die (8) on the one main electrode (3), and the other main electrode (4) of the semiconductor chip (21, 22) thus being pressed against a base plate (5). The two semiconductor chips (21, 22) are electrically connected in series between the two main connections (6, 7) of the power semiconductor submodule.

Abstract: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series.

Abstract: In a method of producing a self-supporting buffer element which is intended to reduce mechanical stresses between two materials with different coefficients of thermal expansion and therefore has regions capable of expansion and/or contraction essentially independently of one another, a metal sheet (1) is deformed into a three-dimensional structure (1′, 1″) in such a way that it can be divided into areas which are capable of expansion and/or contraction essentially independently of one another, whereupon the three-dimensional structure (1, 1″) is pressed and worked to form a structured plate (P).