Abstract: The main object of the invention is a method for manufacturing a photovoltaic module, comprising at least one photovoltaic cell (4) between a first transparent layer (1) forming a front face and a second layer (2) forming a rear face, characterised in that it includes: 1) a first step of depositing a first adhesive layer based on a crosslinkable polymer material over the first layer (1) and depositing a second adhesive layer based on a crosslinkable polymer material over the second layer (2); 2) a second step of partially crosslinking the two adhesive layers; 3) a third step of depositing said at least one photovoltaic cell (4) over one (SPR1) of the two partially crosslinked adhesive layers (SPR1, SPR2); 4) a fourth step of forming a multilayer stack; 5) a fifth step of laminating the multilayer stack.

Abstract: The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.

Abstract: The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.