Patents by Inventor Fabien Coudert

Fabien Coudert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIS transistor and method for making same on a semiconductor substrate
    Patent number: 6562687
    Abstract: The invention relates to an MIS transistor comprising a channel region (118), source (114) and drain (116) regions arranged on either side of the channel, and a gate (150) set closely above the channel region. According to the invention, the channel has a doped central part (140), located between the source and drain regions, and separated from said source and drain regions.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: May 13, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Simon Deleonibus, Georges Guegan, Christian Caillat, Fabien Coudert