Abstract: An electrode for an organic light-emitting diode, includes a transparent or translucent non-conductive substrate, having a refractive index of between 1.3 and 1.6; a transparent electrode layer, formed from a transparent conductive oxide or from a transparent conductive organic polymer; a continuous network of metal lines, deposited on the transparent electrode layer, and, as light-scattering structure, a translucent scattering layer having a refractive index of between 1.7 and 2.4, located between the non-conductive substrate and the electrode layer, wherein the continuous network of metal lines consists, at least at the contact interface with the transparent electrode, of a metal or metal alloy having a reflectivity at least equal to 80% over at least one portion of the visible light spectrum.

Abstract: The subject of the invention is a process for manufacturing an organic light-emitting diode device comprising at least one electrode based on an electrically conductive thin-film multilayer deposited on a substrate, in which the deposition of said multilayer comprises the following steps: a thin-film multilayer comprising at least one thin silver film between at least two thin films is deposited on said at least one face of said substrate; and the at least one coated face is heat treated using at least one source of laser radiation emitted at at least one wavelength lying between 500 and 2000 nm so that the sheet resistance of the multilayer decreases by at least 5%.

Abstract: An OLED device includes a transparent anode of given sheet resistance R1, a cathode of given sheet resistance R2, the ratio r=R2/R1 ranging from 0.1 to 5, a first anode electrical contact and a first cathode electrical contact which is offset from the anode electrical contact, for any point B1 of each anode contact, on defining a distance D1 between the point B1 and a point C1 of the contact surface which is closest to the point B1, and on defining a distance L1 between the point B1 and a point X1 of a second edge of the active zone opposite from the first edge, passing through C1, then the following criteria are defined: if 0.1?r<1.75, then 20%<D1/L1, if 1.75?r<2.5, then 20%<D1/L1<90%, or if 2.5?r<3, then 20%<D1/L1<80%, or else if 3?r?5 then 20%<D1/L1<70%, and a reflector (6) covers the active zone (20).

Abstract: An OLED device includes an anode, which is transparent, anode of a sheet resistance R1, a cathode of sheet resistance R2, the ratio r=R2/R1 ranging from 0.1 to 5, a first anode contact and a second anode contact, spaced from and facing the first anode contact, and a first cathode electrical contact, which is: arranged above the active zone, offset from the first anode contact and from the second anode contact, at every point of the contact surface.

Abstract: An OLED device includes a transparent anode, of sheet resistance R1, and a cathode, of sheet resistance R2, the ratio r=R2/R1 ranging from 0.01 to 2.5, a first anode electrical contact, a first cathode electrical contact, arranged above the active zone, and a reflector covering the active zone above an OLED system, and for each point B of the anode contact, the point B being in an edge of the first anodic region, on defining a distance D between B and the point C closest to the point B, and on defining a distance L between the point B and a point X of an opposite edge of the first anodic region from the first edge, and passing through Ci the following criteria are defined: if 0.01?r<0.1, then 30%<D/L<48%, if 0.1?r<0.5, then 10%<D/L<45%, if 0.5?r<1, then 10%<D/L<45%, if 1?r<1.5, then 5%<D/L<35%, if 1.5?r<2.5, then 5%<D/L<30%.

Abstract: An OLED electrode includes a transparent or translucent non-conductive substrate, with a refractive index between 1.3 and 1.6. A continuous network of lines of a metal or alloy with electrical conductivity at least 5·106 S·m?1 is on a substrate surface. The metal lines have an average width between 0.05 and 3 ?m. These metal lines delimit non-metalized fields of average equivalent diameter between 0.1 and 7.0 ?m. At least 20% of the metal lines' surface has a tangent forming an angle between 15 and 75° relative to a substrate-electrode plane. A transparent or translucent layer completely covers the metal lines and non-metalized fields. The layer has refractive index between 1.6 and 2.4 and resistivity greater than that of the metal lines and less than 104 ?·cm. The metal lines and the transparent or translucent layer form a composite layer called an electrode layer.

Abstract: A solar module is described. The solar module has a laminated composite of two substrates bonded to one another by at least one bonding layer, between which substrates there are solar cells which are connected in series and which each have an absorber zone made of a semiconducting material between a front electrode arranged on a light entrance side of the absorber zone and a rear electrode. A diffusion barrier differing from the front electrode is located between each absorber zone and the bonding layer and is designed to inhibit the diffusion of water molecules from the bonding layer into the absorber zone and/or the diffusion of dopant ions from the absorber zone into the bonding layer. A process for producing such a solar module is also described.

Abstract: The subject of the invention is a process for obtaining a material comprising a substrate coated on at least one portion of at least one of its faces with a stack of thin layers comprising at least one silver layer, said process comprising a step of depositing said stack then a heat treatment step, said heat treatment being carried out by irradiating at least one portion of the surface of said stack using at least one incoherent light source for an irradiation time ranging from 0.1 millisecond to 100 seconds, so that the sheet resistance and/or the emissivity of said stack is reduced by at least 5% in relative terms, the or each silver layer remaining continuous at the end of the treatment.

Abstract: A substrate carrying an OLED electrode, with a sheet resistance of less than 25 ?/square, includes an electrically conducting coating, an essentially inorganic thin electrically conducting layer which is a work-function-matching layer and which exhibits a sheet resistance at least 20 times greater than the sheet resistance of the electrically conducting coating, with a thickness of at most 60 nm, and, between the electrically conducting coating and the work-function-matching layer, a thin buffer layer, which is essentially inorganic and which has a surface resistivity within a range from 10?6 to 1 ?·cm2.

Abstract: The subject of the invention is a process for manufacturing an organic light-emitting diode device comprising at least one electrode based on an electrically conductive thin-film multilayer deposited on a substrate, in which the deposition of said multilayer comprises the following steps: a thin-film multilayer comprising at least one thin silver film between at least two thin films is deposited on said at least one face of said substrate; and the at least one coated face is heat treated using at least one source of laser radiation emitted at at least one wavelength lying between 500 and 2000 nm so that the sheet resistance of the multilayer decreases by at least 5%.

Abstract: An organic photovoltaic cell comprising a substrate, a first electrode formed on the substrate, an organic photoactive medium comprising an electron donor and an electron acceptor, and a second electrode comprising a conductive mesh, the first electrode being located between the substrate and the second electrode. The cell comprises an insulating mesh formed on the first electrode. The conductive mesh is formed on the insulating mesh. The insulating mesh and the conductive mesh define together apertures for receiving the photoactive medium, said apertures being able to receive the photoactive medium after the first electrode, the insulating mesh and the conductive mesh have been deposited on the substrate.

Abstract: The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).

Abstract: A method for fabricating a textured single crystal including depositing pads made of metal on a surface of a single crystal. A protective layer is deposited on the pads and on the single crystal between the pads; and etching the surface with a first compound that etches the metal more rapidly than the protective layer is carried out. Processing continues with etching the surface with a second compound that etches the single crystal more rapidly than the protective layer; and etching the surface with a third compound that etches the protective layer more rapidly than the single crystal. The textured substrate may be used for the epitaxial growth of GaN, AlN or III-N compounds (i.e. a nitride of a metal the positive ion of which carries a +3 positive charge) in the context of the fabrication of LEDs, electronic components or solar cells.

Abstract: A method for fabricating a textured single crystal including depositing pads made of metal on a surface of a single crystal. A protective layer is deposited on the pads and on the single crystal between the pads; and etching the surface with a first compound that etches the metal more rapidly than the protective layer is carried out. Processing continues with etching the surface with a second compound that etches the single crystal more rapidly than the protective layer; and etching the surface with a third compound that etches the protective layer more rapidly than the single crystal. The textured substrate may be used for the epitaxial growth of GaN, AlN or III-N compounds (i.e. a nitride of a metal the positive ion of which carries a +3 positive charge) in the context of the fabrication of LEDs, electronic components or solar cells.

Abstract: This layered element, in particular for a photovoltaic device, includes a polymer layer, a moisture-sensitive layer, and a protective coating forming a moisture barrier inserted between the polymer layer and the moisture-sensitive layer. The protective coating includes an antireflection multilayer comprising at least two thin layers differing in refractive index from each other.

Abstract: The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).