Patents by Inventor Fabio D'ADDAMIO

Fabio D'ADDAMIO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Devices comprising high-K dielectric layer and methods of forming same
    Patent number: 9673039
    Abstract: Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 ? thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: June 6, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Shishir Ray, Yiqun Liu, Jin Ping Liu, Fabio D'Addamio, Sandeep Gaan
  • DEVICES COMPRISING HIGH-K DIELECTRIC LAYER AND METHODS OF FORMING SAME
    Publication number: 20160284540
    Abstract: Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 ? thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.
    Type: Application
    Filed: March 24, 2015
    Publication date: September 29, 2016
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Shishir RAY, Yiqun LIU, Jin Ping LIU, Fabio D'ADDAMIO, Sandeep GAAN