Abstract: A microwave plasma reactor comprises a plasma chamber, a workpiece holder, a gas flow system, one or more microwave generators, a plurality of microwave emitters each comprising an amplifier, a phase shifter and an emitting element mounted at the plasma chamber, wherein each of the microwave emitters is connected to at least one of the one or more microwave generators. The microwave plasma reactor further comprises one or more microwave absorbers, wherein each of the microwave absorbers comprises an absorbing element mounted at the plasma chamber. An emitter control unit controls an amplification of the amplifier and a phase shift of the phase shifter for each of the microwave emitters to generate a desired distribution of microwave power from the emitter array to one or multiple desired locations within the plasma chamber. Further, a method for plasma processing a workpiece is provided.

Abstract: Disclosed is a vertical cavity surface emitting laser (VCSEL) and a method of fabricating or forming the VCSEL that includes from a bottom to a top of the VCSEL a semiconductor substrate, a bottom distributed Bragg reflector (DBR), a semiconductor active region including at least one active subregion, and a top DBR. A dielectric layer may be included between the bottom DBR and the semiconductor active region including the at least one active subregion or the semiconductor active region may include two active subregions without the dielectric layer between the bottom DBR and the semiconductor active region. The VCSEL may also include a grating structure.