Abstract: Power handling circuits that may be packaged as power modules, and methods of operating semiconductor devices in such circuits and modules. An exemplary circuit comprises power terminals to receive electrical power, a first semiconductor device, a first drive circuitry, and a second drive circuitry. The first drive circuitry provides a drive signal to the first semiconductor device in accordance with a desired circuit function when the electrical power received at the power terminals has the positive polarity, and ceases providing the drive circuit when the electrical power received at the power terminals has the negative polarity. During the negative polarity condition, the second drive circuitry provides a drive signals to the first semiconductor device which causes its primary current conduction path to conduct, thereby reducing the power dissipation in the device's parasitic path, and optionally causing a fuse in the circuit providing power to the circuit to blow.

Abstract: Power handling circuits that may be packaged as power modules, and methods of operating semiconductor devices in such circuits and modules. An exemplary circuit comprises power terminals to receive electrical power, a first semiconductor device, a first drive circuitry, and a second drive circuitry. The first drive circuitry provides a drive signal to the first semiconductor device in accordance with a desired circuit function when the electrical power received at the power terminals has the positive polarity, and ceases providing the drive circuit when the electrical power received at the power terminals has the negative polarity. During the negative polarity condition, the second drive circuitry provides a drive signals to the first semiconductor device which causes its primary current conduction path to conduct, thereby reducing the power dissipation in the device's parasitic path, and optionally causing a fuse in the circuit providing power to the circuit to blow.

Abstract: A table that can be used as a dining table with a storage section, and features that allow for conversion of the same for use as a desk.

Abstract: A power module which includes heatsinks made of AlSiC and power semiconductor devices directly mounted thereon.

Abstract: A power module which includes heatsinks made of AlSiC and power semiconductor devices directly mounted thereon.

Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature- sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.