Patents by Inventor Fabio Pintchovski

Fabio Pintchovski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline silicon device electrode and method
    Patent number: 4914046
    Abstract: A polycrystalline silicon electrode and method for its fabrication are disclosed. The electrode includes a barrier layer formed by the implantation of carbon, nitrogen, or oxygen ions between two layers of polycrystalline silicon. The lower layer of polycrystalline silicon is lightly doped or undoped and the top layer is heavily doped to increase the conductivity of the electrode. The barrier layer impedes the diffusion of conductivity determining dopant impurities from one layer of polycrystalline silicon to the other.
    Type: Grant
    Filed: February 3, 1989
    Date of Patent: April 3, 1990
    Assignee: Motorola, Inc.
    Inventors: Philip J. Tobin, Bich Y. Nguyen, Fabio Pintchovski
  • Titanium nitride MOS device gate electrode and method of producing
    Patent number: 4605947
    Abstract: An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
    Type: Grant
    Filed: September 24, 1985
    Date of Patent: August 12, 1986
    Assignee: Motorola Inc.
    Inventors: J. B. Price, Philip J. Tobin, Fabio Pintchovski, Christian A. Seelbach
  • Method of producing titanium nitride MOS device gate electrode
    Patent number: 4570328
    Abstract: An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
    Type: Grant
    Filed: March 7, 1983
    Date of Patent: February 18, 1986
    Assignee: Motorola, Inc.
    Inventors: J. B. Price, Philip J. Tobin, Fabio Pintchovski, Christian A. Seelbach