Patents by Inventor Fabrice Amy

Fabrice Amy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9808755
    Abstract: Methods and apparatuses for separating CO2 and sulfur-containing compounds from a synthesis gas obtained from gasification of a carbonaceous feedstock. The primary separating steps are performed using a sour pressure swing adsorption (SPSA) system, followed by an acid gas enrichment system and a sulfur removal unit. The SPSA system includes multiple pressure equalization steps and a rinse step using a rinse gas that is supplied from a source other than directly from one of the adsorber beds of the SPSA system.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: November 7, 2017
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Shubhra Jyoti Bhadra, Andrew David Wright, Jeffrey Raymond Hufton, Jeffrey William Kloosterman, Fabrice Amy, Edward Landis Weist, Jr.
  • Publication number: 20170021301
    Abstract: Methods and apparatuses for separating CO2 and sulfur-containing compounds from a synthesis gas obtained from gasification of a carbonaceous feedstock. The primary separating steps are performed using a sour pressure swing adsorption (SPSA) system, followed by an acid gas enrichment system and a sulfur removal unit. The SPSA system includes multiple pressure equalization steps and a rinse step using a rinse gas that is supplied from a source other than directly from one of the adsorber beds of the SPSA system.
    Type: Application
    Filed: July 24, 2015
    Publication date: January 26, 2017
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Shubhra Jyoti Bhadra, Andrew David Wright, Jeffrey Raymond Hufton, Jeffrey William Kloosterman, Fabrice Amy, Edward Landis Weist, JR.
  • Publication number: 20110308276
    Abstract: Disclosed are a method and system involving pressurizing an atmospheric gas stream to form at least a compressed atmospheric gas stream, directing the compressed atmospheric gas stream to a first regenerator for cooling, pressurizing to above a second predetermined pressure to form at least a supercritical atmospheric gas stream, directing the supercritical atmospheric gas stream to a second regenerator for cooling, reducing pressure to form at least a liquefied atmospheric gas stream, selectively storing the liquefied atmospheric gas stream, pressurizing the liquefied atmospheric gas stream to form at least a pressurized liquefied atmospheric gas stream, heating the pressurized liquefied atmospheric gas stream in the second regenerator to form at least a heated stream, expanding the heated stream to form at least a medium pressure atmospheric gas stream, directing the medium pressure atmospheric gas stream to the first regenerator, and heating the medium pressure atmospheric gas stream in the first regenerat
    Type: Application
    Filed: June 17, 2010
    Publication date: December 22, 2011
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Jianguo XU, Robert VERO, Fabrice Amy, Paul HIGGINBOTHAM
  • Publication number: 20090236979
    Abstract: The light-emitting device comprising an anode, a cathode, a semi-conducting layer between the anode and the cathode and a hole injection layer comprising a conducting polymer between the anode and the semi-conducting layer; where an interfacial bonding layer is formed in-situ between the hole injection layer and the semi-conducting is disclosed.
    Type: Application
    Filed: March 13, 2009
    Publication date: September 24, 2009
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Gang Chris Han-Adebekun, Xuezhong Jiang, Denise Luise Lindenmuth, Fabrice Amy
  • Patent number: 6667102
    Abstract: A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: December 23, 2003
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Fabrice Amy, Christian Brylinski, GĂ©rald Dujardin, Hanna Enriquez, Andrew Mayne, Patrick Soukiassian