Patents by Inventor Fabrice Dierre
Fabrice Dierre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240077442Abstract: The present invention relates to a sensor device, in particular the invention relates to an electronic sensor device formed within a groove of a substrate adapted such that in response to engagement with an analyte a signal response is provided. The invention also relates to a method of forming such a sensor device. The electronic sensor device comprises a substrate comprising at least one groove, said groove including a first face and a second face, said groove having a cross-sectional profile including at least a groove depth In within the substrate and a groove width at a surface of said substrate. Said first face includes a first electrically non-insulating portion and said second face including a second electrically non-insulating portion wherein, within said profile, said first electrically non-insulating portion is electrically separated from said second electrically non-insulating portion.Type: ApplicationFiled: December 20, 2021Publication date: March 7, 2024Inventors: Fabrice Dierre, Alexander John Topping, Nicholas Kasch
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Publication number: 20240060926Abstract: An electronic device and a method of production thereof. The electronic device (100) comprising at least one groove (107) formed in a substrate (101), the at least one groove (107) having a first face (108) and a second face (109) and a cavity (110) therebetween. A portion of the first and second faces (108), (109) are formed from a non-insulating material (102) and wherein the non-insulating material (102) of the first and second faces (108), (109) are electrically separated from one another.Type: ApplicationFiled: February 7, 2022Publication date: February 22, 2024Inventors: Alexander John Topping, Nicholas Kasch, Fabrice Dierre
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Patent number: 9646731Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.Type: GrantFiled: July 9, 2013Date of Patent: May 9, 2017Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice Dierre, Edgar Göderer, Peter Hackenschmied, Steffen Kappler, Björn Kreisler, Miguel Labayen De Inza, Daniel Niederlöhner, Mario Reinwand, Christian Schröter, Karl Stierstorfer, Matthias Strassburg, Justus Tonn, Stefan Wirth
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Patent number: 9419169Abstract: A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.Type: GrantFiled: August 22, 2013Date of Patent: August 16, 2016Assignee: Siemens AktiengesellschaftInventors: Fabrice Dierre, Peter Hackenschmied, Matthias Strassburg
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Patent number: 9400335Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.Type: GrantFiled: July 10, 2013Date of Patent: July 26, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice Dierre, Björn Kreisler, Miguel Labayen De Inza, Daniel Niederlöhner, Christian Schröter, Matthias Strassburg
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Publication number: 20150260856Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.Type: ApplicationFiled: July 10, 2013Publication date: September 17, 2015Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice Dierre, Björn Kreisler, Miguel Labayen De Inza, Daniel Niederlöhner, Christian Schröter, Matthias Strassburg
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Publication number: 20150221406Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.Type: ApplicationFiled: July 9, 2013Publication date: August 6, 2015Inventors: Fabrice Dierre, Edgar Göderer, Peter Hackenschmied, Steffen Kappler, Björn Kreisler, Miguel Labayen De Inza, Daniel Niederlöhner, Mario Reinwand, Christian Schröter, Karl Stierstorfer, Matthias Strassburg, Justus Tonn, Stefan Wirth
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Patent number: 9052402Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.Type: GrantFiled: August 21, 2012Date of Patent: June 9, 2015Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice Dierre, Matthias Strassburg
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Publication number: 20140054734Abstract: A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.Type: ApplicationFiled: August 22, 2013Publication date: February 27, 2014Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice DIERRE, Peter HACKENSCHMIED, Matthias STRASSBURG
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Patent number: 8563434Abstract: A method of fabrication of electrical contact structures on a semiconductor material includes depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.Type: GrantFiled: May 18, 2010Date of Patent: October 22, 2013Assignee: Kromek LimitedInventors: Mohamed Ayoub, Fabrice Dierre
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Publication number: 20130161773Abstract: A detector element is disclosed, including a semiconducting converter element and a number of pixilated contacts arranged thereon. A radiation detector is also disclosed including such a detector element, along with a medical device having one or more such radiation detectors. Finally, a method for producing a detector element is disclosed, which includes forming pixelated contacts by way of a photolithographic process on the semiconducting converter element using a lithographic mask arranged on a converter element protective layer.Type: ApplicationFiled: December 20, 2012Publication date: June 27, 2013Inventors: Fabrice DIERRE, Peter HACKENSCHMIED, Hiroshi KATAKABE, Noriyuki KISHI, Christian SCHRÖTER, Hiroyuki SHIRAKI, Matthias STRASSBURG, Mitsuru TAMASHIRO
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Publication number: 20130049146Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.Type: ApplicationFiled: August 21, 2012Publication date: February 28, 2013Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Fabrice DIERRE, Matthias STRASSBURG
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Publication number: 20120045868Abstract: A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.Type: ApplicationFiled: May 18, 2010Publication date: February 23, 2012Applicant: Durham Scientific Crystals LimitedInventors: Mohamed Ayoub, Fabrice Dierre