Abstract: A process for treating a semiconductor-on-insulator type structure that includes, successively, a support substrate, an oxide layer and a thin semiconductor layer. The process includes formation of a silicon nitride or silicon oxynitride mask on the thin semiconductor layer to define exposed areas at the surface of the layer which are not covered by the mask, and which are arranged in a desired pattern; and application of a heat treatment in a neutral or controlled reducing atmosphere and under controlled conditions of temperature and time to induce at least a portion of the oxygen of the oxide layer to diffuse through the thin semiconductor layer, thereby resulting in the controlled reduction in the oxide thickness in the areas of the oxide layer corresponding to the desired pattern. The mask is formed so as to be at least partially buried in the thickness of the thin semiconductor layer.

Abstract: The invention concerns a process to treat a structure of semiconductor-on-insulator type structure of a carrier substrate, an oxide layer and a thin layer of a semiconductor material, wherein the structure having a peripheral ring in which the oxide layer is exposed, and the process includes the application of a main thermal treatment in a neutral or controlled reducing atmosphere. The method includes a step to cover at least an exposed peripheral part of the oxide layer, prior to the main thermal treatment, this latter treatment being conducted under controlled time and temperature conditions so as to urge at least part of the oxygen in the oxide layer to diffuse through the thin semiconductor layer, leading to controlled reduction of the thickness of the oxide layer.

Abstract: The present invention notably concerns a method to fabricate and treat a structure of semiconductor-on-insulator type, successively comprising a carrier substrate (1), an oxide layer (3) and a thin layer (2) of semiconducting material, according to which: 1) a mask is formed on said thin layer (2) so as to define exposed regions (20), on the surface of said layer, which are not covered by the mask; 2) heat treatment is applied so as to urge at least part of the oxygen of the oxide layer (3) to diffuse through the thin layer (2), leading to controlled removal of the oxide in the regions (30) of the oxide layer (3) corresponding to the desired pattern; characterized in that said carrier substrate (1) and thin layer (2) are arranged relative to each other so that their crystal lattices, in a plane parallel to their interface (I), together form an angle called a “twist angle” of no more than 1°, and in a plane perpendicular to their interface (I) an angle called a “tilt angle” of no more than 1°, and in that a th