Abstract: An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.

Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).

Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).