Patents by Inventor Fabrizio Galluzzi

Fabrizio Galluzzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optically programmable optoelectronic cellular neural network
    Patent number: 5864836
    Abstract: An optoelectronic cellular neural network, which can be programmed optically, in amorphous or polycrystalline silicon, which makes up a monolithic image processing system with optical input and output which can be programmed by optical signals. Its layered structure for both the upper and lower surfaces are occupied, without discontinuity, by photosensitive and photoemissive devices. The network basically consists of an input photosensitive layer, a processing layer, a photosensitive control layer and also an optical control mask.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: January 26, 1999
    Assignee: Universita' Degli Studi di Roma "La Sapienza"
    Inventors: Marco Balsi, Valerio Cimagalli, Fabrizio Galluzzi
  • Thin-film electroluminescent device
    Patent number: 5107174
    Abstract: This relates to a thin film, multilayered device with a threshold voltage for electroluminescence less than 100v having good electro-optical characteristics. The layers comprise an amorphous support, on which a binary alloy layer, a luminescent layer, an insulating layer, and a conductor layer are deposited.
    Type: Grant
    Filed: February 7, 1990
    Date of Patent: April 21, 1992
    Assignees: Eniricerche, S.p.A., Enichem, S.p.A.
    Inventors: Fabrizio Galluzzi, Nicola Romeo, Vittorio Canevari, Giorgio Sberueglieri
  • p-Si/n-CdS Heterojunction photovoltaic cells
    Patent number: 4366337
    Abstract: The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm.sup.2.
    Type: Grant
    Filed: August 13, 1980
    Date of Patent: December 28, 1982
    Assignee: E.N.I. Ente Nazionale Idrocarburi
    Inventors: Paolo Alessandrini, Lucio De Angelis, Fabrizio Galluzzi, Francesco Losciale, Ernesto Scafe'