Abstract: Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CnHxFyIz, wherein 4?n?10, 0?x?21, 0?y?21, and 1?z?4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x?0, y?1, z?0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

Abstract: A method comprises: introducing a vapor of an oxygen and iodine-containing etching compound into a chamber that contains a substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer, wherein the oxygen and iodine-containing etching compound has the formula CnHxFyIzOe, wherein 0?n?10, 0?x?21, 0?y?21, 1?z?4 and 1?e?2; activating a plasma to produce an activated oxygen and iodine-containing etching compound; and allowing an etching reaction to proceed between the activated oxygen and iodine-containing etching compound and the silicon-containing film to selectively etch the silicon-containing film from the patterned mask layer, thereby forming a patterned structure.

Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CnHxFyIz, wherein 4?n?10, 0?x?21, 0?y?21, and 1?z?4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.

Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.

Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.