Patents by Inventor Fabrizio Rue Redda

Fabrizio Rue Redda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fast recovery diode with a single large area p/n junction
    Patent number: 7091572
    Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: August 15, 2006
    Assignee: International Rectifier Corporation
    Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola
  • Fast recovery diode with a single large area P/N junction
    Publication number: 20060017130
    Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
    Type: Application
    Filed: September 23, 2005
    Publication date: January 26, 2006
    Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola
  • Low cost fast recovery diode and process of its manufacture
    Publication number: 20020195613
    Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
    Type: Application
    Filed: April 2, 2002
    Publication date: December 26, 2002
    Applicant: International Rectifier Corp.
    Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola