Abstract: A CMP pad conditioner assembly includes a backing plate including a first face including a plurality of first mounting locations and a second face including a plurality of second mounting locations. A plurality of segments is secured to the first face. The segments include a substrate having a first surface and a second surface opposite the first surface. A plurality of protrusions is integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer. A plurality of second segments is secured to the second face, the second segments including a substrate having a first surface and a second surface opposite the first surface. Each of the second segments includes a plurality of protrusions integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.