Patents by Inventor Fadwa EL-MELLOUHI

Fadwa EL-MELLOUHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cesium-niobium-chalcogenide compounds and semiconductor devices including the same
    Patent number: 11866344
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: January 9, 2024
    Assignees: Trinity College Dublin, Qatar Foundation for Education, Science and Community Development
    Inventors: Fadwa El-Mellouhi, Heesoo Park, Nouar Tabet, Fahhad Alharbi, Stefano Sanvito
  • CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
    Publication number: 20210269326
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Application
    Filed: February 5, 2019
    Publication date: September 2, 2021
    Inventors: Fadwa EL-MELLOUHI, Heesoo PARK, Nouar TABET, Fahhad ALHARBI, Stefano SANVITO
  • Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
    Patent number: 10553367
    Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: February 4, 2020
    Assignees: QATAR FOUNDATION, TRINITY COLLEGE DUBLIN
    Inventors: Fadwa El-Mellouhi, Nouar Tabet, Fahhad Hussain Alharbi, Stefano Sanvito, Heesoo Park
  • INSTRINSIC STABILITY ENHANCEMENT AND IONIC MIGRATION MITIGATION BY FLUORINATED CATIONS INCORPORATION IN HYBRID LEAD HALIDE PEROVSKITES
    Publication number: 20190287734
    Abstract: Disclosed is a method of enhancing thermodynamic stability of a hybrid organic inorganic perovskite through a partial fluorination of CH3NH3+ cation. The method identifies that optimal stability of perovskite material can be reached with low controlled concentration of modified fluorinated cations, which has a tendency to stabilize the material due to the strengthening of some initially weak hydrogen bonds between MA+ cations and surrounding lead-iodide framework. Fluorination also reduces significantly the iodine vacancy mediated diffusion in the perovskite under applied bias voltage.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 19, 2019
    Inventors: Fadwa El-Mellouhi, Nouar Tabet, Fahhud Hussain Alharbi, Abdelhak Belaidi, Belabbes Merzougui, Sergey Rashkeev
  • PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME
    Publication number: 20190122829
    Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.
    Type: Application
    Filed: October 19, 2018
    Publication date: April 25, 2019
    Inventors: Fadwa EL-MELLOUHI, Nouar TABET, Fahhad Hussain ALHARBI, Stefano SANVITO, Heesoo PARK